FQB50N06 Fairchild Semiconductor, FQB50N06 Datasheet

MOSFET, N, D2-PAK

FQB50N06

Manufacturer Part Number
FQB50N06
Description
MOSFET, N, D2-PAK
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FQB50N06

Transistor Polarity
N Channel
Continuous Drain Current Id
50A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
22mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
25V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number
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Quantity
Price
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Manufacturer:
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Part Number:
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©2008 Fairchild Semiconductor Corporation
FQB50N06 / FQI50N06
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
FQB Series
D
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
G
D
T
S
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 50A, 60V, R
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 C maximum junction temperature rating
• RoHS Compliant
FQI Series
I
2
-PAK
DS(on)
FQB50N06 / FQI50N06
Typ
--
--
--
= 0.022
-55 to +175
35.4
3.75
200
490
120
300
7.0
0.8
60
50
50
12
25
G
@V
!
!
Max
1.24
62.5
40
GS
! "
! "
= 10 V
!
!
!
!
S
D
October 2008
"
"
"
"
"
"
QFET
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
Rev. A2. Oct 2008
°C
°C
W
W
V
A
A
A
V
A
®

Related parts for FQB50N06

FQB50N06 Summary of contents

Page 1

... A = 25°C) C Parameter October 2008 QFET = 0.022 @ DS(on " " ! " ! " " " " " FQB50N06 / FQI50N06 Units 35.4 A 200 490 7.0 V/ns 3.75 W 120 W 0.8 W/°C -55 to +175 °C 300 °C Typ Max Units -- 1 ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 230 50A 25V ≤ 50A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2008 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° ...

Page 3

... Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3000 2500 C oss 2000 C iss 1500 1000 C rss 500 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor Corporation 175 ℃ 25 ℃ Figure 2. Transfer Characteristics 175 ℃ ※ Note : T = 25℃ J 150 200 ...

Page 4

... Notes : 175 Single Pulse Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2008 Fairchild Semiconductor Corporation (Continued) 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = 250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 60 50 100μ Figure 10. Maximum Drain Current ※ ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2008 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2008 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Mechanical Dimensions ©2008 Fairchild Semiconductor Corporation PAK Dimensions in Millimeters Rev. A2. Oct 2008 ...

Page 8

... Mechanical Dimensions ©2008 Fairchild Semiconductor Corporation PAK Dimensions in Millimeters Rev. A2. Oct 2008 ...

Page 9

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FQB50N06 / FQI50N06 Rev. A2 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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