IRF7603PBF International Rectifier, IRF7603PBF Datasheet

IRF7603PBF

Manufacturer Part Number

IRF7603PBF

Description

MOSFET, N, MICRO-8

Manufacturer

International Rectifier

Datasheet

1.IRF7603PBF.pdf (8 pages)

Specifications of IRF7603PBF

Transistor Polarity

N Channel

Continuous Drain Current Id

5.6A

Drain Source Voltage Vds

30V

On Resistance Rds(on)

135mohm

Rds(on) Test Voltage Vgs

10V

Voltage Vgs Max

20V

Operating Temperature Range

-55Â°C To

Threshold Voltage Vgs Typ

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Description

Absolute Maximum Ratings

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The new Micro8 package, with half the footprint area of the

standard SO-8, provides the smallest footprint available in

an SOIC outline. This makes the Micro8 an ideal device for

applications where printed circuit board space is at a

premium. The low profile (<1.1mm) of the Micro8 will allow

it to fit easily into extremely thin application environments

such as portable electronics and PCMCIA cards.

Thermal Resistance

All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective

only for product marked with Date Code 505 or later .

dv/dt

@ T

Generation V Technology

Ultra Low On-Resistance

N-Channel MOSFET

Very Small SOIC Package

Low Profile (<1.1mm)

Available in Tape & Reel

Fast Switching

STG

= 25°C

= 70°C

= 25°C

Maximum Junction-to-Ambient

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Parameter

@ 10V

T o p V ie w

Typ.

–––

-55 to + 150

HEXFET

Max.

± 20

5.6

4.5

1.8

5.0

Micro8

Max.

IRF7603

DS(on)

Power MOSFET

DSS

PD - 9.1262D

= 0.035

= 30V

mW/°C

°C/W

Units

V/ns

°C

8/25/97

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IRF7603PBF Summary of contents

Page 1

... Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRF7603 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTT µ LSE W IDTH ° ...

Page 4

IRF7603 iss 6 ...

Page 5

Q G 10V Charge Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V . 3mA I G Current Sampling Resistors Fig 9b. Gate Charge ...

Page 6

IRF7603 D.U Reverse Recovery Current Re-Applied Voltage Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - dv/dt controlled by R Driver same type as ...

Page 7

Package Outline Micro8 Outline Dimensions are shown in millimeters (inches ...

Page 8

IRF7603 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches -48 1 & ...

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