IXFH12N100 IXYS SEMICONDUCTOR, IXFH12N100 Datasheet
IXFH12N100
Manufacturer Part Number
IXFH12N100
Description
MOSFET, N, TO-247
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXFH10N100.pdf
(4 pages)
Specifications of IXFH12N100
Transistor Polarity
N Channel
Continuous Drain Current Id
12A
Drain Source Voltage Vds
1kV
On Resistance Rds(on)
1.05ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
4.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH12N100
Manufacturer:
IXYS
Quantity:
35 500
Company:
Part Number:
IXFH12N100F
Manufacturer:
IXYS
Quantity:
5 000
Company:
Part Number:
IXFH12N100F
Manufacturer:
FSC
Quantity:
30 000
Part Number:
IXFH12N100F
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Company:
Part Number:
IXFH12N100P
Manufacturer:
SHARP
Quantity:
30 000
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
© 2004 IXYS All rights reserved
DM
GSS
D25
AR
DSS
JM
L
GSM
AR
J
stg
GS(th)
DSS
DGR
GS
D
DSS
DS(on)
d
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
V
I
T
C
C
C
C
S
C
GS
DS
GS
DS
GS
J
J
GS
J
≤ I
≤ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
DM
TM
rr
, di/dt ≤ 100 A/µs, V
GS
, HDMOS
, I
D
D
DC
D
= 3 mA
= 4 mA
DSS
, V
= 0.5 • I
G
= 2 Ω
DS
= 0
TM
D25
GS
Family
= 1 MΩ
T
T
DD
J
J
(T
≤ V
= 25°C
= 125°C
10N100
12N100
J
= 25°C, unless otherwise specified)
DSS
,
JM
TO-204 = 18 g, TO-247 = 6 g
IXFH/IXFM 10 N100 1000 V
IXFH/IXFM 12 N100 1000 V
10N100
12N100
10N100
12N100
10N100
12N100
1000
min.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
1000
1000
±20
±30
300
150
300
10
12
40
48
10
12
30
5
max.
±100
1.20
1.05
250
4.5
1
V/ns
mA
mJ
nA
µA
°C
°C
°C
°C
Ω
Ω
V
V
W
V
V
V
V
A
A
A
A
A
A
TO-247 AD (IXFH)
TO-204 AA (IXFM)
G = Gate,
S = Source,
Features
Applications
Advantages
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
AC motor control
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
t
rr
V
≤ ≤ ≤ ≤ ≤ 250 ns
DSS
DS (on)
HDMOS
D
D = Drain,
TAB = Drain
10 A 1.20 Ω Ω Ω Ω Ω
12 A 1.05 Ω Ω Ω Ω Ω
I
D25
TM
G
DS91531F(01/04)
process
R
DS(on)
(TAB)
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IXFH12N100 Summary of contents
Page 1
HiPerFET TM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low t , HDMOS TM rr Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V Continuous GS V Transient ...
Page 2
Symbol Test Conditions 0.5 • iss MHz oss rss t d(on ...
Page 3
Fig. 1 Output Characteristics 25° Volts DS Fig vs. Drain Current DS(on) 1 25°C J 1.4 1.3 ...
Page 4
Fig.7 Gate Charge Characteristic Curve 500V 10mA Gate Charge - nCoulombs Fig.8 Capacitance Curves 4500 ...