IXFK64N60P IXYS SEMICONDUCTOR, IXFK64N60P Datasheet
IXFK64N60P
Manufacturer Part Number
IXFK64N60P
Description
MOSFET, N, TO-264
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXFX64N60P.pdf
(5 pages)
Specifications of IXFK64N60P
Transistor Polarity
N Channel
Continuous Drain Current Id
64A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
96mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
30V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFK64N60P
Manufacturer:
IXYS
Quantity:
9 000
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
F
M
Weight
GSS
DSS
D25
DM
AR
GS(th)
J
JM
stg
L
SOLD
C
DS(on)
© 2006 IXYS All rights reserved
DSS
DGR
GSS
GSM
AR
AS
D
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting force (PLUS247)
Mounting torque (TO-264)
TO-264
V
S
PLUS247
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 3 mA
= 8 mA
, V
= 0.5 I
G
= 2 Ω
DS
= 0
D25
, Note 1
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
,
IXFK 64N60P
IXFX 64N60P
600
Min.
3.0
20..120/4.5..25
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
1040
600
600
±30
±40
150
150
300
260
3.5
64
64
80
20
10
6
±200
1000
Max.
5.0
25
96
V/ns
N/lb
m Ω
° C
° C
mJ
nA
µA
µA
° C
°C
°C
W
g
g
V
V
V
V
V
V
A
A
A
J
V
I
R
t
TO-264 (IXFK)
Features
l
l
l
l
Advantages
l
l
l
PLUS247 (IXFX)
D25
rr
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
DS(on)
DSS
G
G = Gate
S = Source
D
S
=
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
D
Tab = Drain
(TAB)
600 V
64
96
200 ns
DS99442E(01/06)
= Drain
(TAB)
mΩ Ω Ω Ω Ω
A
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IXFK64N60P Summary of contents
Page 1
PolarHV HiPerFET TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions 25° 150° C DSS 25° 150° DGR J V Continuous GSS ...
Page 2
Symbol Test Conditions 0 D25 C iss MHz oss rss t d(on ...
Page 3
Fig. 1. Output Characteristics @ 25º 10V Volts DS Fig. 3. Output ...
Page 4
Fig. 7. Input Admittance 100 125ºC J 25º 40º 3 Volts GS Fig. 9. Forward Voltage Drop of Intrinsic Diode 140 120 ...
Page 5
IXYS All rights reserved Fig. 13. Maximum Transient Thermal Resistance 0.01 0.1 Pulse W idth - Seconds 1 10 ...