IXTK102N30P IXYS SEMICONDUCTOR, IXTK102N30P Datasheet
IXTK102N30P
Manufacturer Part Number
IXTK102N30P
Description
MOSFET, N, TO-264
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXTK102N30P.pdf
(5 pages)
Specifications of IXTK102N30P
Transistor Polarity
N Channel
Continuous Drain Current Id
102A
Drain Source Voltage Vds
300V
On Resistance Rds(on)
33mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTK102N30P
Manufacturer:
IXYS
Quantity:
18 000
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
D25
D(RMS)
DM
AR
GSS
DSS
© 2006 IXYS All rights reserved
J
JM
stg
L
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-264
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250 µA
= 500µA
, V
G
= 0.5 I
= 4 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
IXTK 102N30P
DSS
JM
,
300
Min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
300
300
±20
±30
102
250
700
150
300
260
2.5
75
60
60
10
10
±200
250
Max.
5.0
25
33
V/ns
m Ω
mJ
° C
° C
nA
µA
µA
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
J
TO-264 (IXTK)
G = Gate
S = Source
Features
l
l
l
Advantages
l
l
l
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
G
D
S
V
I
R
D25
DS(on)
DSS
D = Drain
TAB = Drain
= 300
= 102
≤ ≤ ≤ ≤ ≤
(TAB)
DS99130E(12/05)
33 mΩ Ω Ω Ω Ω
A
V
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IXTK102N30P Summary of contents
Page 1
PolarHT TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions 25° 150° C DSS 25° 150° DGR J V Continuous GSS V Transient GSM I ...
Page 2
Symbol Test Conditions 0 D25 C iss MHz oss rss t d(on ...
Page 3
Fig. 1. Output Characte ris tics º 110 V = 10V GS 100 0 olts DS ...
Page 4
Fig. 7. Input Adm ittance 150 125 100 125ºC J 25ºC -40º 3.5 4 4 olts GS Fig. 9. Sour ce Cur Source -To-Drain V ...
Page 5
Fig. 13. M axim um Trans ie nt The tance 1.00 0.10 0.01 1 © 2006 IXYS All rights reserved 10 Pulse Width - milliseconds IXTK 102N30P 100 1000 ...