MOSFET, N, TO-264

 

IXTK180N15P

Manufacturer Part NumberIXTK180N15P
DescriptionMOSFET, N, TO-264
ManufacturerIXYS SEMICONDUCTOR
IXTK180N15P datasheets

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Warranty: 60 days

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Specifications of IXTK180N15P

Transistor PolarityN ChannelContinuous Drain Current Id180A
Drain Source Voltage Vds150VOn Resistance Rds(on)10mohm
Rds(on) Test Voltage Vgs10VVoltage Vgs Max20V
Operating Temperature Range-55°C ToThreshold Voltage Vgs Typ5V
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
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PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
V
T
= 25° C to 175° C
DSS
J
V
T
= 25° C to 175° C; R
DGR
J
V
Continuous
DSS
V
Transient
GSM
I
T
= 25° C
D25
C
I
External lead current limit
D(RMS)
I
T
= 25° C, pulse width limited by T
DM
C
I
T
= 25° C
AR
C
E
T
= 25° C
AR
C
E
T
= 25° C
AS
C
≤ I
, di/dt ≤ 100 A/µs, V
dv/dt
I
S
DM
T
≤ 150° C, R
= 4 Ω
J
G
P
T
= 25° C
D
C
T
J
T
JM
T
stg
T
1.6 mm (0.062 in.) from case for 10 s
L
T
Plastic body for 10 s
SOLD
M
Mounting torque
d
Weight
Symbol
Test Conditions
(T
= 25° C, unless otherwise specified)
J
= 250 µA
BV
V
= 0 V, I
DSS
GS
D
V
V
= V
, I
= 500µA
GS(th)
DS
GS
D
= ±20 V
I
V
, V
= 0
GSS
GS
DC
DS
I
V
= V
DSS
DS
DSS
V
= 0 V
GS
R
V
= 10 V, I
= 0.5 I
DS(on)
GS
D
D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2005 IXYS All rights reserved
IXTK 180N15P
Maximum Ratings
100
= 1 MΩ
100
GS
±20
±30
180
75
380
JM
60
100
4
≤ V
,
10
DD
DSS
800
-55 ... +175
175
-55 ... +150
300
260
1.13/10 Nm/lb.in.
10
Characteristic Values
Min.
Typ.
150
2.5
±200
T
= 150° C
250
J
V
= 150 V
DSS
I
= 180 A
D25
≤ ≤ ≤ ≤ ≤ 10 m Ω Ω Ω Ω Ω
R
DS(on)
TO-264 (IXTK)
V
V
V
V
G
A
D
S
A
A
A
G = Gate
D = Drain
S = Source
TAB = Drain
mJ
J
V/ns
Features
W
l
International standard package
°C
l
Unclamped Inductive Switching (UIS)
°C
rated
°C
l
Low package inductance
° C
- easy to drive and to protect
° C
Advantages
g
l
Easy to mount
l
Space savings
Max.
l
High power density
V
5.0
V
nA
µA
25
µA
m Ω
10
(TAB)
DS99297E(12/05)

Related parts for IXTK180N15P

Part Number DescriptionManufacturer Datasheet
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IXTK88N30P  IXTK88N30P MOSFET N-CH 300V 88A TO-264 IXYS

IXTK180N15P Summary of contents

  • Page 1

    PolarHT TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions 25° 175° C DSS 25° 175° DGR J V Continuous DSS V Transient GSM I ...

  • Page 2

    Symbol Test Conditions 0 D25 C iss MHz oss rss t d(on ...

  • Page 3

    Fig. 1. Output Characteristics @ 25 180 V 160 140 120 100 0.4 0 Volts D S Fig. 3. Output Characteristics @ 150 180 V 160 140 120 100 ...

  • Page 4

    Fig. 7. Input Adm ittance 250 225 200 175 150 125 100 º 150 C J º º - 4.5 5 5 Volts G S Fig. ...

  • Page 5

    ...

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