IXTK200N10P IXYS SEMICONDUCTOR, IXTK200N10P Datasheet
IXTK200N10P
Manufacturer Part Number
IXTK200N10P
Description
MOSFET, N, TO-264
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXTK200N10P.pdf
(5 pages)
Specifications of IXTK200N10P
Transistor Polarity
N Channel
Continuous Drain Current Id
200A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
7.5mohm
Rds(on) Test Voltage Vgs
15V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTK200N10P
Manufacturer:
IXYS
Quantity:
18 000
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
D25
D(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
© 2006 IXYS All rights reserved
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
= 15 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
D
= 250 µA
= 500µA
, V
G
= 0.5 I
= 400A
= 4 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
J
≤ V
= 150° C
IXTK 200N10P
DSS
JM
,
100
Min.
2.5
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
Typ.
5.5
1.13/10 Nm/lb.in.
100
100
±20
±30
200
400
100
800
175
300
260
75
60
10
10
4
±200
250
Max.
5.0
7.5
25
V/ns
m Ω
m Ω
mJ
nA
µA
µA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
J
TO-264 (IXTK)
G = Gate
S = Source
Features
l
l
l
Advantages
l
l
l
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
G
D
S
V
I
R
D25
DS(on)
DSS
D = Drain
TAB = Drain
= 100 V
= 200 A
≤ ≤ ≤ ≤ ≤ 7.5 mΩ Ω Ω Ω Ω
(TAB)
DS99186E(10/05)
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IXTK200N10P Summary of contents
Page 1
PolarHT TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions 25° 175° C DSS 25° 175° DGR J V Continuous GS V Transient GSM I ...
Page 2
Symbol Test Conditions 0 D25 C iss MHz oss rss t d(on ...
Page 3
Fig. 1. Output Characteristics º 200 V = 10V GS 175 9V 150 125 100 0.2 0.4 0.6 0 Volts D S Fig. 3. Output Characteristics º @ 150 200 V ...
Page 4
Fig. 7. Input Adm ittance 300 250 200 150 º -40 C 100 J º º 150 4.5 5 5 Volts G S Fig. 9. Source Current vs. ...
Page 5
...