PSMN011-80YS NXP Semiconductors, PSMN011-80YS Datasheet

MOSFET,N CH,80V,67A,LFPAK

PSMN011-80YS

Manufacturer Part Number
PSMN011-80YS
Description
MOSFET,N CH,80V,67A,LFPAK
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN011-80YS

Transistor Polarity
N Channel
Drain Source Voltage Vds
80V
On Resistance Rds(on)
8mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Transistor Case
RoHS Compliant
Transistor Case Style
SOT-669
Rohs Compliant
Yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PSMN011-80YS
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
Table 1.
Symbol
V
I
P
T
Static characteristics
R
D
j
DS
tot
DSon
PSMN011-80YS
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
Rev. 02 — 28 October 2010
Advanced TrenchMOS provides low
RDSon and low gate charge
High efficiency gains in switching
power converters
DC-to-DC converters
Lithium-ion battery protection
Load switching
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
Conditions
T
T
see
T
V
T
V
T
see
j
mb
mb
j
j
GS
GS
≥ 25 °C; T
= 100 °C; see
= 25 °C; see
Figure 1
Figure 13
= 25 °C; V
= 25 °C; see
= 10 V; I
= 10 V; I
j
D
D
≤ 175 °C
GS
= 25 A;
= 25 A;
Figure
Improved mechanical and thermal
characteristics
LFPAK provides maximum power
density in a Power SO8 package
Motor control
Server power supplies
Figure 12
Figure 2
= 10 V;
12;
Min
-
-
-
-55
-
-
Product data sheet
Typ
-
-
-
-
-
8.6
Max Unit
80
67
117
175
18
11
V
A
W
°C
mΩ
mΩ

Related parts for PSMN011-80YS

PSMN011-80YS Summary of contents

Page 1

... PSMN011-80YS N-channel LFPAK mΩ standard level MOSFET Rev. 02 — 28 October 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ...

Page 2

... drain-source avalanche Ω; unclamped energy R GS Simplified outline SOT669 (LFPAK) Description plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN011-80YS Min Typ = Figure 14 ° j(init) ≤ sup Graphic symbol D G ...

Page 3

... V sup GS 003aad341 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN011-80YS Min - = 20 kΩ -20 Figure 1 - Figure °C; see Figure -55 - ° ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN011-80YS Product data sheet N-channel LFPAK mΩ standard level MOSFET DC 10 All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN011-80YS 003aad343 10 μ s 100 μ 100 ms 2 ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN011-80YS Product data sheet N-channel LFPAK mΩ standard level MOSFET Conditions see Figure 4 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN011-80YS Min Typ Max - 0.5 1.3 003a a d342 −2 − (s) © ...

Page 6

... DS GS see Figure 14; see Figure see D DS see Figure MHz °C; see Figure 1.6 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN011-80YS Min Typ Max = -55 ° ° 4 ° 125 ° 100 = 25 ° 100 = 25 ° ...

Page 7

... A/µ 003aad311 5 ( (V) DS Fig 6. 003aad338 60 80 100 I (A) D Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN011-80YS Min Typ = 25 ° 100 175 ° Transfer characteristics: drain current as a function of gate-source voltage; typical values 4000 C ...

Page 8

... (V) GS Fig 10. Gate-source threshold voltage as a function of 03aa35 typ max (V) GS Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN011-80YS 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature 3 a 2.4 1 ...

Page 9

... N-channel LFPAK mΩ standard level MOSFET 003aad312 5 100 I (A) D Fig 14. Gate charge waveform definitions 003aad335 V = 40V (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN011-80YS GS(pl) V GS(th GS1 GS2 G(tot (pF ...

Page 10

... PSMN011-80YS Product data sheet N-channel LFPAK mΩ standard level MOSFET 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN011-80YS 003aad334 = 25 ° 0.9 1.2 V (V) SD © NXP B.V. 2010. All rights reserved ...

Page 11

... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN011-80YS detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5 ...

Page 12

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN011-80YS v.2 20101028 • Modifications: Status changed from objective to product. • Various changes to content. PSMN011-80YS v.1 20100226 PSMN011-80YS Product data sheet N-channel LFPAK mΩ standard level MOSFET Data sheet status Change notice ...

Page 13

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN011-80YS © NXP B.V. 2010. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN011-80YS Trademarks © NXP B.V. 2010. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 28 October 2010 Document identifier: PSMN011-80YS ...

Related keywords