PSMN015-60PS NXP Semiconductors, PSMN015-60PS Datasheet - Page 3

• Manufacturer Part Number: PSMN015-60PS
• Description: MOSFET,N CH,60V,50A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN015-60PS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 12.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN015-60PS_2
Objective data sheet
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering
temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
Conditions
T
T
V
V
t
T
t
V
R
T
p
p
j
j
mb
mb
GS
GS
GS
GS
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≥ 25 °C; T
All information provided in this document is subject to legal disclaimers.
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
= 50 Ω; unclamped
Rev. 02 — 22 February 2010
j
j
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
= 100 °C; see
= 25 °C; see
Figure 2
= 25 °C; I
mb
mb
= 25 °C; see
= 25 °C
GS
D
= 20 kΩ
N-channel 60 V 14.8 mΩ standard level MOSFET
= 50 A; V
Figure 1
Figure 1
Figure 3
sup
≤ 60 V;
PSMN015-60PS
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
© NXP B.V. 2010. All rights reserved.
Max
60
60
20
36
50
201
86
175
175
260
50
201
44
V
°C
°C
Unit
V
V
A
A
A
W
°C
A
A
mJ
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