PSMN017-60YS NXP Semiconductors, PSMN017-60YS Datasheet
PSMN017-60YS
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PSMN017-60YS Summary of contents
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... PSMN017-60YS N-channel LFPAK 60 V 15.7 mΩ standard level MOSFET Rev. 02 — 1 April 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...
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... on-state resistance T = 100 °C; see °C; see j Simplified outline SOT669 (LFPAK) Description plastic single-ended surface-mounted package (LFPAK); 4 leads All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 PSMN017-60YS Min Typ = Figure 12.3 D Figure 13 Graphic symbol mb G mbb076 © NXP B.V. 2010. All rights reserved. ...
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... ° j(init Ω; unclamped R GS 003aae077 120 P der (%) 80 40 150 200 ( ° Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 PSMN017-60YS Min - - - Figure -55 - ≤ sup 100 150 Normalized total power dissipation as a function of mounting base temperature © ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN017-60YS_2 Product data sheet N-channel LFPAK 60 V 15.7 mΩ standard level MOSFET / All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 PSMN017-60YS 003aae078 = 10 μ 100 μ 100 ms 2 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN017-60YS_2 Product data sheet N-channel LFPAK 60 V 15.7 mΩ standard level MOSFET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 PSMN017-60YS Min Typ Max - 0.9 2.03 003aae079 δ ...
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... see Figure see Figure 14 and see Figure 14 and MHz see Figure Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 PSMN017-60YS Min Typ Figure Figure 0. 24 Figure 16.5 - 6.4 - 3.5 - 2.9 - 4 ° ...
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... Fig 6. 003aae083 50 R DSon C (mΩ) iss rss (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 PSMN017-60YS Min Typ Figure 33.4 - 38.9 = 175 ° Transfer characteristics: drain current as a function of gate-source voltage; typical values ...
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... T (°C) j Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature. All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 PSMN017-60YS min typ max 003aad696 0 60 120 © NXP B.V. 2010. All rights reserved. ...
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... N-channel LFPAK 60 V 15.7 mΩ standard level MOSFET 003aae086 5.4 5 (A) D Fig 14. Gate charge waveform definitions 003aae087 (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 PSMN017-60YS GS(pl) V GS(th GS1 GS2 G(tot (pF) 3 ...
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... PSMN017-60YS_2 Product data sheet N-channel LFPAK 60 V 15.7 mΩ standard level MOSFET ( 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 PSMN017-60YS 003aae088 = 25 ° 0.9 1.2 V (V) SD © NXP B.V. 2010. All rights reserved ...
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... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 PSMN017-60YS detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5 ...
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... N-channel LFPAK 60 V 15.7 mΩ standard level MOSFET Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 PSMN017-60YS Supersedes PSMN017-60YS_1 - © NXP B.V. 2010. All rights reserved ...
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... All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 PSMN017-60YS © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 PSMN017-60YS Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 1 April 2010 Document identifier: PSMN017-60YS_2 ...