PSMN018-80YS NXP Semiconductors, PSMN018-80YS Datasheet
PSMN018-80YS
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PSMN018-80YS Summary of contents
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... PSMN018-80YS N-channel LFPAK mΩ standard level MOSFET Rev. 02 — 28 October 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ...
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... drain-source avalanche Ω; unclamped energy R GS Simplified outline SOT669 (LFPAK) Description plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN018-80YS Min Typ = Figure 14 ° j(init) ≤ sup Graphic symbol D G ...
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... Ω; unclamped V sup GS 003aad330 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN018-80YS Min - = 20 kΩ -20 Figure 1 - Figure 1 - Figure -55 - 100 ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN018-80YS Product data sheet N-channel LFPAK mΩ standard level MOSFET DC 10 All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN018-80YS 003aad329 10 μs 100 μ 100 ms 2 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN018-80YS Product data sheet N-channel LFPAK mΩ standard level MOSFET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN018-80YS Min Typ Max - 0.81 1.7 003aad328 tp P δ ...
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... see Figure 14; see Figure see D DS 14; see Figure MHz °C; see Figure 1.6 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN018-80YS Min Typ Max = -55 ° ° 4 ° 125 ° ° 100 °C ...
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... A/µ 003aad283 7 6 5.5 5 4 (V) DS Fig 6. 003aad290 (A) D Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN018-80YS Min Typ = 25 ° 175 ° Transfer characteristics: drain current as a function of gate-source voltage; typical values 2500 C (pF) 2000 ...
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... (V) GS Fig 10. Gate-source threshold voltage as a function of 03aa35 typ max (V) GS Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN018-80YS 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature 2.5 a 2.0 1 ...
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... N-channel LFPAK mΩ standard level MOSFET 003aad284 100 I (A) D Fig 14. Gate charge waveform definitions 003aad287 V = 40V (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN018-80YS GS(pl) V GS(th GS1 GS2 G(tot (pF ...
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... PSMN018-80YS Product data sheet N-channel LFPAK mΩ standard level MOSFET 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN018-80YS 003aad286 = 25 ° 0.9 1.2 V (V) SD © NXP B.V. 2010. All rights reserved ...
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... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN018-80YS detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN018-80YS v.2 20101028 • Modifications: Various changes to content. PSMN018-80YS v.1 20101026 PSMN018-80YS Product data sheet N-channel LFPAK mΩ standard level MOSFET Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN018-80YS © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 October 2010 PSMN018-80YS Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 28 October 2010 Document identifier: PSMN018-80YS ...