PSMN1R8-30PL NXP Semiconductors, PSMN1R8-30PL Datasheet
PSMN1R8-30PL
Specifications of PSMN1R8-30PL
Related parts for PSMN1R8-30PL
PSMN1R8-30PL Summary of contents
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... PSMN1R8-30PL N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220 Rev. 02 — 2 November 2010 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...
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... N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220 Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL Graphic symbol mbb076 Version SOT78 © NXP B.V. 2010. All rights reserved ...
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... V sup GS 003aad357 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL Min - = 20 kΩ - -20 [1] Figure 1 - [1] Figure 1 - Figure -55 -55 [ 100 A; - ...
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... PSMN1R8-30PL Product data sheet N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220 Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL 003aad381 10 μs 100 μ 100 (V) DS © NXP B.V. 2010. All rights reserved ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN1R8-30PL Product data sheet N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220 Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL Min Typ Max - 0.3 0.56 003aad080 t p δ ...
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... see Figure 14; see Figure see Figure 14; DS see Figure MHz °C; see Figure 16 j All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL Min Typ Max = 25 ° -55 ° 1.3 1.7 2. ° 125 ° 200 = 25 °C ...
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... L = 4.7 Ω R G(ext see Figure /dt = -100 A/µ 003aad394 100 I (A) V (V) = 2.8 GS 2.6 2 (V) DS Fig 6. All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL Min Typ = 4 156 - 135 - ° 175 ° ° Transfer characteristics: drain current as a function of gate-source voltage; typical values ...
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... (V) GS Fig 10. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL 003aad401 100 I (A) D 003aab271 min typ max ( © NXP B.V. 2010. All rights reserved ...
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... T (°C) j Fig 12. Drain-source on-state resistance as a function of drain current; typical values 03aa27 120 180 ( ° Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL 003aad395 V (V) = 2 GS(pl) V ...
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... Fig 16. Input, output and reverse transfer capacitances 100 175 ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL - function of drain-source voltage; typical values 003aad397 = 25 ° 0 (V) SD © NXP B.V. 2010. All rights reserved. 003aad399 ...
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... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN1R8-30PL v.2 20101102 • Modifications: Status changed from objective to product. • Various changes to content. PSMN1R8-30PL v.1 20100218 PSMN1R8-30PL Product data sheet N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220 Data sheet status ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 2 November 2010 Document identifier: PSMN1R8-30PL ...