PSMN2R0-30PL NXP Semiconductors, PSMN2R0-30PL Datasheet
PSMN2R0-30PL
Specifications of PSMN2R0-30PL
Available stocks
Related parts for PSMN2R0-30PL
PSMN2R0-30PL Summary of contents
Page 1
... PSMN2R0-30PL N-channel 30 V 2.1 mΩ logic level MOSFET Rev. 01 — 24 June 2009 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...
Page 2
... Table 3. Ordering information Type number Package Name Description PSMN2R0-30PL TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB PSMN2R0-30PL_1 Product data sheet PSMN2R0-30PL N-channel 30 V 2.1 mΩ logic level MOSFET Simplified outline SOT78 (TO-220AB) Rev. 01 — 24 June 2009 Graphic symbol D G ...
Page 3
... ° 100 j(init Ω; unclamped R GS 003aad248 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Rev. 01 — 24 June 2009 PSMN2R0-30PL Min Max - -20 20 [1] - 100 [1] - 100 Figure 3 - 943 - 211 -55 175 -55 175 [1] - 100 - 943 ≤ ...
Page 4
... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN2R0-30PL_1 Product data sheet N-channel 30 V 2.1 mΩ logic level MOSFET = DSon Conditions see Figure Rev. 01 — 24 June 2009 PSMN2R0-30PL 003aad295 10 μs 100 μ 100 (V) DS Min Typ Max - 0.41 0.71 003aad247 t p δ ...
Page 5
... see Figure 13; see Figure 4 see Figure 13; see Figure see Figure 13; see Figure MHz °C; see Figure 0.5 Ω 4 4.7 Ω R G(ext) Rev. 01 — 24 June 2009 PSMN2R0-30PL Min Typ Max Unit 1.3 1.7 2. µ µ 100 100 2.8 mΩ ...
Page 6
... Transfer characteristics: drain current as a function of gate-source voltage; typical values 003aad257 8 R DSon (mΩ 100 0 I (A) D Fig 8. Drain source on-state resistance as a function of gate-source voltage; typical values Rev. 01 — 24 June 2009 PSMN2R0-30PL Min Typ Max Unit - 0.76 1 003aad254 = 175 ° ° ...
Page 7
... R DSon (mΩ 120 180 ( ° Fig 12. Drain-source on-state resistance as a function of drain current; typical values Rev. 01 — 24 June 2009 PSMN2R0-30PL N-channel 30 V 2.1 mΩ logic level MOSFET 003a a c982 max typ min 0 60 120 T (°C) j 003aad250 3 3 (V) = ...
Page 8
... C I iss S ( oss 40 C rss (V) DS Fig 16. Source current as a function of source-drain voltage; typical values Rev. 01 — 24 June 2009 PSMN2R0-30PL N-channel 30 V 2.1 mΩ logic level MOSFET 003aad255 V = 12V (nC) G 003aad256 = 175 ° °C 0 0 © NXP B.V. 2009. All rights reserved. ...
Page 9
... Fig 17. Input and reverse transfer capacitances as a function of gate-source voltage; typical values PSMN2R0-30PL_1 Product data sheet N-channel 30 V 2.1 mΩ logic level MOSFET 003aad252 C iss C rss 2 (V) GS Rev. 01 — 24 June 2009 PSMN2R0-30PL © NXP B.V. 2009. All rights reserved ...
Page 10
... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB Rev. 01 — 24 June 2009 PSMN2R0-30PL N-channel 30 V 2.1 mΩ logic level MOSFET mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.5 2 ...
Page 11
... Revision history Table 7. Revision history Document ID Release date PSMN2R0-30PL_1 20090624 PSMN2R0-30PL_1 Product data sheet N-channel 30 V 2.1 mΩ logic level MOSFET Data sheet status Change notice Product data sheet - Rev. 01 — 24 June 2009 PSMN2R0-30PL Supersedes - © NXP B.V. 2009. All rights reserved ...
Page 12
... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 24 June 2009 PSMN2R0-30PL © NXP B.V. 2009. All rights reserved ...
Page 13
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PSMN2R0-30PL_1 All rights reserved. Date of release: 24 June 2009 ...