PSMN2R7-30PL NXP Semiconductors, PSMN2R7-30PL Datasheet

MOSFET,N CH,30V,100A,TO-220AB

PSMN2R7-30PL

Manufacturer Part Number
PSMN2R7-30PL
Description
MOSFET,N CH,30V,100A,TO-220AB
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN2R7-30PL

Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
2.3mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Transistor
RoHS Compliant
Transistor Case Style
TO-220AB
Rohs Compliant
Yes
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
Table 1.
[1]
[2]
Symbol
V
I
P
T
Static characteristics
R
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
D
j
DS
tot
DS(AL)S
DSon
GD
G(tot)
PSMN2R7-30PL
N-channel 30 V 2.7 mΩ logic level MOSFET in TO-220
Rev. 02 — 2 November 2010
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
Continuous current is limited by package.
Measured 3 mm from package.
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
gate-drain charge
total gate charge
non-repetitive
drain-source avalanche
energy
Conditions
T
T
see
T
V
T
V
V
see
V
I
R
D
j
mb
mb
GS
j
GS
DS
GS
GS
≥ 25 °C; T
= 25 °C; see
= 100 A; V
Figure 1
Figure 15
= 25 °C; V
= 25 °C; see
= 15 V; see
= 10 V; I
= 4.5 V; I
= 10 V; T
= 50 Ω; unclamped
j
D
sup
≤ 175 °C
D
j(init)
GS
= 15 A;
= 25 A;
Figure 12
Suitable for logic level gate drive
sources
Motor control
Server power supplies
Figure
≤ 30 V;
Figure 2
= 10 V;
= 25 °C;
14;
[1]
[2]
Min
-
-
-
-55
-
-
-
-
Product data sheet
Typ
-
-
-
-
2.2
8
32
-
Max Unit
30
100
170
175
2.7
-
-
300
V
A
W
°C
mΩ
nC
nC
mJ

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PSMN2R7-30PL Summary of contents

Page 1

... PSMN2R7-30PL N-channel 30 V 2.7 mΩ logic level MOSFET in TO-220 Rev. 02 — 2 November 2010 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...

Page 2

... N-channel 30 V 2.7 mΩ logic level MOSFET in TO-220 Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL Graphic symbol mbb076 Version SOT78 © NXP B.V. 2010. All rights reserved ...

Page 3

... V sup GS 003aad358 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL Min - = 20 kΩ -20 [1] Figure 1 - [1] Figure 1 - Figure -55 -55 [ 100 A; ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN2R7-30PL Product data sheet N-channel 30 V 2.7 mΩ logic level MOSFET in TO-220 = DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL 003aad382 10 μs 100 μ 100 (V) DS © NXP B.V. 2010. All rights reserved ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN2R7-30PL Product data sheet N-channel 30 V 2.7 mΩ logic level MOSFET in TO-220 Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL Min Typ Max - 0.54 0.88 003aad355 t p δ ...

Page 6

... Figure MHz see Figure 14; see Figure see Figure 14; see Figure MHz °C; see Figure 16 j All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL Min Typ Max 1.3 1.7 2.15 0 2. 100 - 10 100 - 10 100 - 2 3.5 ...

Page 7

... R G(ext see Figure /dt = -100 A/µ 003aad404 100 (A) GS 2.8 2.6 2 (V) DS Fig 6. All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL Min Typ = 4 ° 175 ° ° Transfer characteristics: drain current as a function of gate-source voltage; typical values ...

Page 8

... (V) GS Fig 10. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL 003aad411 100 I (A) D 003aab271 min typ max ( © NXP B.V. 2010. All rights reserved ...

Page 9

... T (°C) j Fig 12. Drain-source on-state resistance as a function of drain current; typical values 03aa27 120 180 ( ° Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL 003aad405 V (V) = 2 GS(pl) V ...

Page 10

... G Fig 16. Input, output and reverse transfer capacitances 100 175 ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL function of drain-source voltage; typical values 003aad407 = 25 ° 0 (V) SD © NXP B.V. 2010. All rights reserved. ...

Page 11

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2 ...

Page 12

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN2R7-30PL v.2 20101102 • Modifications: Status changed from objective to product. • Various changes to content. PSMN2R7-30PL v.1 20100226 PSMN2R7-30PL Product data sheet N-channel 30 V 2.7 mΩ logic level MOSFET in TO-220 Data sheet status ...

Page 13

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL © NXP B.V. 2010. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL Trademarks © NXP B.V. 2010. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 2 November 2010 Document identifier: PSMN2R7-30PL ...

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