PSMN3R4-30PL NXP Semiconductors, PSMN3R4-30PL Datasheet

MOSFET,N CH,30V,TO-220AB

PSMN3R4-30PL

Manufacturer Part Number
PSMN3R4-30PL
Description
MOSFET,N CH,30V,TO-220AB
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN3R4-30PL

Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
3.4mohm
Rds(on) Test Voltage Vgs
10V
Transistor Case Style
TO-220AB
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PSMN3R4-30PL
Manufacturer:
IR
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
Table 1.
Symbol
V
I
P
T
Static characteristics
R
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
D
j
DS
tot
DS(AL)S
DSon
GD
G(tot)
PSMN3R4-30PL
N-channel 30 V 3.4 mΩ logic level MOSFET
Rev. 01 — 2 November 2010
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
Quick reference data
Parameter
drain-source voltage
drain current
total power
dissipation
junction temperature
drain-source on-state
resistance
gate-drain charge
total gate charge
non-repetitive
drain-source
avalanche energy
V
Conditions
T
T
see
T
V
T
V
T
V
see
V
I
R
D
j
mb
mb
j
j
GS
GS
GS
DS
GS
GS
≥ 25 °C; T
= 25 °C; see
= 25 °C; see
= 100 A; V
Figure 1
Figure 15
= 25 °C; V
= 25 °C; see
= 4.5 V; I
= 10 V; I
= 4.5 V; I
= 15 V; see
= 10 V; T
= 50 Ω; unclamped
j
D
sup
≤ 175 °C
D
D
j(init)
GS
= 10 A;
Suitable for logic level gate drive
sources
Motor control
Server power supplies
= 10 A;
Figure 13
Figure 13
= 25 A;
Figure
≤ 30 V;
Figure 2
= 10 V;
= 25 °C;
14;
[1]
[2]
Min
-
-
-
-55
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
3.5
2.8
8
31
-
Max Unit
30
100
114
175
4.1
3.4
-
-
200
V
A
W
°C
mΩ
mΩ
nC
nC
mJ

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PSMN3R4-30PL Summary of contents

Page 1

... PSMN3R4-30PL N-channel 30 V 3.4 mΩ logic level MOSFET Rev. 01 — 2 November 2010 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...

Page 2

... N-channel 30 V 3.4 mΩ logic level MOSFET Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 PSMN3R4-30PL Graphic symbol mbb076 Version SOT78 © NXP B.V. 2010. All rights reserved ...

Page 3

... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 PSMN3R4-30PL N-channel 30 V 3.4 mΩ logic level MOSFET Min - = 20 kΩ -20 [1] Figure 1 - [1] Figure ° ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN3R4-30PL Product data sheet = DSon All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 PSMN3R4-30PL N-channel 30 V 3.4 mΩ logic level MOSFET 003aad383 10 μs 100 μ 100 © NXP B.V. 2010. All rights reserved. ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN3R4-30PL Product data sheet N-channel 30 V 3.4 mΩ logic level MOSFET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 PSMN3R4-30PL Min Typ Max - 0.65 1 003aad007 δ ...

Page 6

... DS GS see Figure 14; see Figure see Figure 14; DS see Figure MHz °C; see Figure 16 j All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 PSMN3R4-30PL Min Typ Max = 25 ° -55 ° °C; 1.3 1.7 2.15 = 175 °C; 0 -55 ° ...

Page 7

... V ( 5000 GS 4000 2.8 3000 2.6 2000 2.4 1000 (V) DS Fig 6. Input and reverse transfer capacitances as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 PSMN3R4-30PL Min Typ - ° 003aad419 © NXP B.V. 2010. All rights reserved. ...

Page 8

... D Fig 8. 003aad415 = 25 ° (V) GS Fig 10. Sub-threshold drain current as a function of All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 PSMN3R4-30PL N-channel 30 V 3.4 mΩ logic level MOSFET 12 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values -1 10 ...

Page 9

... Fig 12. Normalized drain-source on-state resistance 003aad414 3 3.5 4 100 I (A) D Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 PSMN3R4-30PL N-channel 30 V 3.4 mΩ logic level MOSFET 2 a 1.5 1 0.5 0 − 120 factor as a function of junction temperature V DS ...

Page 10

... Fig 16. Input, output and reverse transfer capacitances 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 PSMN3R4-30PL N-channel 30 V 3.4 mΩ logic level MOSFET function of drain-source voltage; typical values 003aad416 = 25 ° 0.9 1.2 V ...

Page 11

... REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 PSMN3R4-30PL N-channel 30 V 3.4 mΩ logic level MOSFET mounting base ( max ...

Page 12

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN3R4-30PL v.1 20101102 PSMN3R4-30PL Product data sheet N-channel 30 V 3.4 mΩ logic level MOSFET Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 ...

Page 13

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 PSMN3R4-30PL N-channel 30 V 3.4 mΩ logic level MOSFET © NXP B.V. 2010. All rights reserved ...

Page 14

... HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 PSMN3R4-30PL N-channel 30 V 3.4 mΩ logic level MOSFET Trademarks © NXP B.V. 2010. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 2 November 2010 Document identifier: PSMN3R4-30PL ...

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