PSMN3R8-30LL NXP Semiconductors, PSMN3R8-30LL Datasheet
PSMN3R8-30LL
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PSMN3R8-30LL Summary of contents
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... PSMN3R8-30LL N-channel QFN3333 30 V 3.7 mΩ logic level MOSFET Rev. 3 — 18 August 2010 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment ...
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... avalanche energy unclamped; R Simplified outline Transparent top view SOT873-1 (QFN3333) Description plastic thermal enhanced very thin small outline package; no leads; 8 terminals All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 August 2010 PSMN3R8-30LL Min = Figure 14 Figure 14 °C; - j(init) ≤ ...
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... Figure °C; see Figure °C mb ≤ 10 µs; T pulsed ° ° j(init) ≤ unclamped sup All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 August 2010 PSMN3R8-30LL Min Max - kΩ -20 20 Figure Figure 413 - 69 -55 150 -55 150 - 260 ...
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... N-channel QFN3333 30 V 3.7 mΩ logic level MOSFET 120 P der (%) 100 120 I D (A) 100 ( 100 All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 August 2010 PSMN3R8-30LL 003aab937 150 200 T (°C) mb 003aae270 150 200 T (°C) mb © NXP B.V. 2010. All rights reserved ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN3R8-30LL Product data sheet N-channel QFN3333 30 V 3.7 mΩ logic level MOSFET / Conditions see −4 − All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 August 2010 PSMN3R8-30LL = 10 μ 100 μ 100 (V) DS Min Typ Figure ...
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... Figure see Figure see Figure 14; see Figure see Figure 14; DS see Figure MHz °C; see Figure 16 j All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 August 2010 PSMN3R8-30LL Min Typ Max Unit 0 1.3 1 0.05 1 µ µ 100 ...
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... 4.7 Ω °C G(ext ° see Figure /dt = 100 A/µ 003a a e 275 (A) D Fig 6. All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 August 2010 PSMN3R8-30LL Min Typ = 150 ° Transfer characteristics: drain current as a function of gate-source voltage; typical values ...
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... V ( 0.75 1 -60 V (V) DS Fig 10. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 August 2010 PSMN3R8-30LL 003a a e 278 Drain-source on-state resistance as a function of gate-source voltage; typical values max typ min 0 60 120 ...
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... V ( Fig 12. Normalized drain-source on-state resistance 003a a e 276 3 3.5 4 (A) D Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 August 2010 PSMN3R8-30LL − 120 factor as a function of junction temperature GS(pl) V GS(th GS1 GS2 ...
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... (nC) G Fig 16. Input, output and reverse transfer capacitances ( 150 ° ° 0.5 All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 August 2010 PSMN3R8-30LL − function of drain-source voltage; typical values 003a a e 281 1 1.5 V (V) SD 003a a e 280 C iss C oss ...
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... 2.4 3.4 1.80 0.55 0.52 0.65 1.95 2.2 3.2 1.58 0.45 0.35 REFERENCES JEDEC JEITA - - - - - - All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 August 2010 PSMN3R8-30LL detail 0.1 0.05 0.1 0.1 EUROPEAN PROJECTION SOT873 ISSUE DATE 10-03-10 19-04-10 © NXP B.V. 2010. All rights reserved. ...
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... N-channel QFN3333 30 V 3.7 mΩ logic level MOSFET Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 August 2010 PSMN3R8-30LL Supersedes PSMN3R8-30LL v.2 PSMN3R8-30LL v.1 © NXP B.V. 2010. All rights reserved ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 August 2010 PSMN3R8-30LL © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 August 2010 PSMN3R8-30LL Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 18 August 2010 Document identifier: PSMN3R8-30LL ...