STD25NF10L STMicroelectronics, STD25NF10L Datasheet

MOSFET, N, D-PAK

STD25NF10L

Manufacturer Part Number
STD25NF10L
Description
MOSFET, N, D-PAK
Manufacturer
STMicroelectronics
Datasheet

Specifications of STD25NF10L

Transistor Polarity
N Channel
Continuous Drain Current Id
25A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
30mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
16V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Order codes
General features
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for Telecom
and Computer application. It is also intended for
any application with low gate charge drive
requirements.
Applications
July 2006
STD25NF10L
Exceptional dv/dt capability
100% avalanche tested
Low threshold device
Logic level device
Switching application
Type
STD25NF10LT4
Part number
V
100V
DSS
Low gate charge STripFET™ II Power MOSFET
< 0.035Ω
R
DS(on)
D25NF10L
Marking
N-channel 100V - 0.030Ω - 25A - DPAK
25A
I
D
Rev 2
Internal schematic diagram
Package
DPAK
STD25NF10L
DPAK
1
3
Tape & reel
Packaging
www.st.com
1/13
13

Related parts for STD25NF10L

STD25NF10L Summary of contents

Page 1

... Part number STD25NF10LT4 July 2006 N-channel 100V - 0.030Ω - 25A - DPAK Low gate charge STripFET™ II Power MOSFET R I DS(on) D < 0.035Ω 25A Internal schematic diagram Marking D25NF10L Rev 2 STD25NF10L 3 1 DPAK Package Packaging DPAK Tape & reel 1/13 www.st.com 13 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/ STD25NF10L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STD25NF10L 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS (1) I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T tot Derating Factor (3) dv/dt Peak diode recovery avalanche energy (4) E Single pulse avalanche energy ...

Page 4

... D Parameter Test conditions V = 15V 25V 1MHz 50V 4.7Ω (see Figure 13 80V 5V (see Figure 14) STD25NF10L Min. Typ. Max. =0 100 GS 10 ±100 = 250µA 1 2.5 = 12.5A 0.030 0.035 = 12.5A 0.035 0.040 Min. Typ. Max. = 12.5A 24 1710 250 110 20 = 12. 25A 4.7Ω ...

Page 5

... STD25NF10L Table 5. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/13 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STD25NF10L ...

Page 7

... STD25NF10L Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized breakdown voltage vs temperature 7/13 ...

Page 8

... Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/13 Figure 14. Gate charge test circuit Figure 16. Unclamped Inductive load test circuit Figure 18. Switching time waveform STD25NF10L ...

Page 9

... STD25NF10L 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... STD25NF10L inch MIN. TYP. MAX. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.019 0.023 0.236 0.244 0.200 ...

Page 11

... STD25NF10L 5 Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. A0 6 1.5 D1 1.5 E 1.65 F 7.4 K0 2.55 P0 3.9 P1 7 15.7 TAPE AND REEL SHIPMENT inch MAX. MIN. MAX. 7 0.267 0.275 10.6 0.409 0.417 12.1 0.476 1 ...

Page 12

... Revision history 6 Revision history Table 6. Revision history Date 21-Jun-2004 03-Jun-2006 12/13 Revision 1 Preliminary version 2 New template, no content change STD25NF10L Changes ...

Page 13

... STD25NF10L Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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