IRF620STRRPBF Vishay, IRF620STRRPBF Datasheet

N CH MOSFET, 200V, 5.2A, SMD-220

IRF620STRRPBF

Manufacturer Part Number
IRF620STRRPBF
Description
N CH MOSFET, 200V, 5.2A, SMD-220
Manufacturer
Vishay
Datasheet

Specifications of IRF620STRRPBF

Transistor Polarity
N Channel
Continuous Drain Current Id
5.2A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
800mohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.8 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.2 A
Power Dissipation
3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SMD-220
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91028
S-82998-Rev. B, 12-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 5.2 A, dI/dt ≤ 95 A/µs, V
= 50 V, starting T
G D
(Ω)
D
S
2
PAK (TO-263)
a
a
J
= 25 °C, L = 6.1 mH, R
c
a
DD
b
V
≤ V
GS
D
IRF620SPbF
SiHF620S-E3
IRF620S
SiHF620S
e
G
= 10 V
DS
2
PAK (TO-263)
N-Channel MOSFET
, T
J
e
Single
≤ 150 °C.
200
3.0
7.9
14
G
D
S
= 25 Ω, I
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.80
GS
AS
at 10 V
= 5.2 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
D
IRF620STRLPbF
SiHF620STL-E3
IRF620STRL
SiHF620STL
= 100 °C
= 25 °C
2
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Simple Drive Requirements
• Ease of Paralleling
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
PAK (TO-263)
2
PAK (TO-263) is suitable for high current applications
2
PAK (TO-263) is a surface mount power package
a
a
SYMBOL
T
dV/dt
a
J
V
V
E
E
I
a
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
IRF620S, SiHF620S
design,
- 55 to + 150
D
IRF620STRRPbF
SiHF620STR-E3
IRF620STRR
SiHF620STR
2
LIMIT
0.025
300
PAK (TO-263)
± 20
0.40
200
110
5.2
3.3
5.2
5.0
3.0
5.0
18
50
low
Vishay Siliconix
d
on-resistance
a
a
a
www.vishay.com
a
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

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IRF620STRRPBF Summary of contents

Page 1

... 100 ° ° °C A for Ω 5.2 A (see fig. 12 ≤ 150 °C. J IRF620S, SiHF620S Vishay Siliconix device design, low on-resistance 2 D PAK (TO-263 IRF620STRRPbF a a SiHF620STR- IRF620STRR a a SiHF620STR SYMBOL LIMIT V 200 DS V ± 5 3 0.40 0.025 E 110 ...

Page 2

... IRF620S, SiHF620S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... Fig Typical Output Characteristics, T Document Number: 91028 S-82998-Rev. B, 12-Jan-09 4 µs Pulse Width ° 91028_03 = 25 ° µs Pulse Width T = 150 ° 91028_04 = 150 °C C IRF620S, SiHF620S Vishay Siliconix 1 10 ° 150 ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...

Page 4

... IRF620S, SiHF620S Vishay Siliconix 750 MHz iss rss gd 600 oss ds 450 300 150 Drain-to-Source Voltage ( 91028_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 4 100 Total Gate Charge (nC) 91028_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss rss 91028_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91028 S-82998-Rev. B, 12-Jan-09 Fig. 10a - Switching Time Test Circuit 90 % 125 150 10 % Fig. 10b - Switching Time Waveforms - 0 Rectangular Pulse Duration (s) 1 IRF620S, SiHF620S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...

Page 6

... IRF620S, SiHF620S Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91028_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 300 Top ...

Page 7

... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91028. Document Number: 91028 S-82998-Rev ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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