IRF630STRLPBF Vishay, IRF630STRLPBF Datasheet

N CHANNEL MOSFET, 200V, 9A, SMD-220

IRF630STRLPBF

Manufacturer Part Number
IRF630STRLPBF
Description
N CHANNEL MOSFET, 200V, 9A, SMD-220
Manufacturer
Vishay
Datasheet

Specifications of IRF630STRLPBF

Transistor Polarity
N Channel
Continuous Drain Current Id
9A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
400mohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.4 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9 A
Power Dissipation
3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Note
a. See device orientation.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91032
S10-2695-Rev. B, 29-Nov-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
DS
DS(on)
g
gs
gd
(Max.) (nC)
(nC)
(V)
(nC)
()
K
D
2
PAK (TO-263)
a
D
G
S
a
a
b
V
GS
e
= 10 V
G
N-Channel MOSFET
e
Single
SiHF630S-GE3
IRF630SPbF
IRF630S
200
D
SiHF630S-E3
SiHF630S
7.0
43
23
2
PAK (TO-263)
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.40
GS
at 10 V
T
T
C
A
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
accommodating die sizes up to HEX-4. It provides the
highest
on-resistance in any existing surface mount package. The
D
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
2
Definition
PAK is suitable for high current applications because of
D
SiHF630STRL-GE3
IRF630STRLPbF
SiHF630STL-E3
IRF630STRL
SiHF630STL
2
PAK (TO-263)
2
PAK is a surface mount power package capable of
power
SYMBOL
V
V
E
E
I
I
P
device
DM
I
AR
GS
DS
AS
AR
D
a
a
D
a
capability
a
a
design,
IRF630S, SiHF630S
and
LIMIT
0.025
± 20
0.59
200
250
D
SiHF630STRR-GE3
IRF630STRRPbF
SiHF630STR-E3
IRF630STRR
SiHF630STR
9.0
5.7
9.0
7.4
3.0
36
74
low
2
PAK (TO-263)
Vishay Siliconix
the
on-resistance
lowest
a
a
www.vishay.com
a
a
a
UNIT
W/°C
possible
mJ
mJ
W
V
A
A
and
1

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IRF630STRLPBF Summary of contents

Page 1

... The 2 D PAK is suitable for high current applications because of its low internal connection resistance and can dissipate typical surface mount application PAK (TO-263) D PAK (TO-263) SiHF630S-GE3 SiHF630STRL-GE3 IRF630SPbF IRF630STRLPbF SiHF630S-E3 SiHF630STL-E3 IRF630S IRF630STRL SiHF630S SiHF630STL = 25 °C, unless otherwise noted ° 100 ° ...

Page 2

... IRF630S, SiHF630S Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (T PARAMETER c Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11 starting ° 4.6 mH  9.0 A, dI/dt  120 A/μs, V  ...

Page 3

... MOSFET symbol I S showing the integral reverse junction diode ° 9 ° dI/dt = 100 A/μ Intrinsic turn-on time is negligible (turn-on is dominated 4 µs Pulse Width ° 91032_02 = 25 °C C IRF630S, SiHF630S Vishay Siliconix MIN. TYP. MAX 170 = 5 1 Top 8 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4 µ ...

Page 4

... IRF630S, SiHF630S Vishay Siliconix 1 10 ° 150 C ° µs Pulse Width - Gate-to-Source Voltage ( 91032_03 Fig Typical Transfer Characteristics 3 5 2.5 2.0 1.5 1.0 0.5 0 100 120 140 160 T Junction Temperature (° 91032_04 Fig Normalized On-Resistance vs. Temperature www.vishay.com 4 1600 1200 800 400 ...

Page 5

... V , Drain-to-Source Voltage (V) 91032_08 DS Fig Maximum Safe Operating Area Document Number: 91032 S10-2695-Rev. B, 29-Nov- 1.3 1.5 91032_09 Fig Maximum Drain Current vs. Case Temperature 10 µs 100 µ IRF630S, SiHF630S Vishay Siliconix 100 125 T , Case Temperature (° D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig ...

Page 6

... IRF630S, SiHF630S Vishay Siliconix − 0.5 0.2 0.1 0.05 0.1 0.02 0. 91032_11 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Vary t to obtain p required D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91032_12c www.vishay.com 6 Single Pulse (Thermal Response Rectangular Pulse Duration (s) ...

Page 7

... Re-applied voltage Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91032. ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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