IRF840LCSTRRPBF Vishay, IRF840LCSTRRPBF Datasheet

N CHANNEL MOSFET, 500V, 8A, D2-PAK

IRF840LCSTRRPBF

Manufacturer Part Number
IRF840LCSTRRPBF
Description
N CHANNEL MOSFET, 500V, 8A, D2-PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF840LCSTRRPBF

Transistor Polarity
N Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
850mohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
e. Uses IRF840LC, SiHF840LC data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91068
S10-1477-Rev. B, 05-Jul-10
I
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetiitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
2
PAK
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(V)
(nC)
 8.0 A, dI/dt  100 A/μs, V
(TO-262)
()
J
= 25 °C, L = 14 mH, R
G
D
S
a
G
a, e
D
D
2
PAK (TO-263)
S
c, e
a
b, e
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
DD
V
GS
g
 V
= 25 , I
= 10 V
DS
, T
G
J
Single
 150 °C.
500
N-Channel MOSFET
AS
39
10
19
D
SiHF840LCS-GE3
IRF840LCSPbF
SiHF840LCS-E3
IRF840LCS
SiHF840LCS
2
= 8.0 A (see fig. 12).
PAK (TO-263)
C
= 25 °C, unless otherwise noted)
Power MOSFET
D
S
V
0.85
GS
at 10 V
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V V
• Reduced C
• Extremely High Frequency Operation
• Repetitive Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge then conventional Power
MOSFETs. Utilizing the new LCDMOS (low charge device
Power MOSFETs) technology, the device improvements are
achieved without added product cost, allowing for reduced
gate drive requirements and total system savings. In
addition, reduced switching losses and improved efficiency
are achievable in a variety of high frequency applications.
Frequencies of a few MHz at high current are possible using
the new low charge Power MOSFETs.
These device improvements combined with the proven
ruggedness
MOSFETs offer the designer a new power transistor
standard for switching applications.
Definition
D
-
-
-
IRF840LCSTRR
SiHF840LCSTR
2
PAK (TO-263)
SYMBOL
T
dV/dt
J
iss
V
V
E
E
I
I
, T
P
DM
I
AR
and
GS
DS
AS
AR
D
D
, C
stg
oss
a
a
GS
reliability
, C
Rating
rss
- 55 to + 150
LIMIT
that
300
± 30
500
510
125
8.0
5.1
1.0
8.0
3.1
3.5
I
SiHF840LCL-GE3
IRF840LCLPbF
SiHF840LCL-E3
IRF840LCL
SiHF840LCL
28
13
2
PAK (TO-262)
Vishay Siliconix
d
characterize
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
Power
1

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IRF840LCSTRRPBF Summary of contents

Page 1

... IRF840LCSTRR SiHF840LCS SiHF840LCSTR = 25 °C, unless otherwise noted ° 100 ° ° °C A for 8.0 A (see fig. 12). AS  150 ° Vishay Siliconix Rating iss oss rss and reliability that characterize 2 I PAK (TO-262) SiHF840LCL-GE3 IRF840LCLPbF SiHF840LCL-E3 a IRF840LCL a SiHF840LCL SYMBOL LIMIT V 500 ...

Page 2

... IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mounted, Steady-State) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... Drain-to-Source Voltage ( 91068_02 Fig Typical Output Characteristics Document Number: 91068 S10-1477-Rev. B, 05-Jul-10 4 µs Pulse Width ° 91068_03 4 µs Pulse Width T = 150 ° 91068_04 Fig Normalized On-Resistance vs. Temperature Vishay Siliconix 1 10 ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...

Page 4

... IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix 2400 MHz iss 2000 rss oss 1600 1200 800 400 Drain-to-Source Voltage ( 91068_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 8 250 100 Total Gate Charge (nC) 91068_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91068 S10-1477-Rev. B, 05-Jul-10 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Driver + - 1200 1000 800 600 400 200 100 50 Starting T , Junction Temperature (°C) ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91068. Document Number: 91068 S10-1477-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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