N CHANNEL MOSFET, 60V, 14A, D-PAK

 

IRFR020TRLPBF

Manufacturer Part NumberIRFR020TRLPBF
DescriptionN CHANNEL MOSFET, 60V, 14A, D-PAK
ManufacturerVishay
IRFR020TRLPBF datasheets

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Warranty: 60 days

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Specifications of IRFR020TRLPBF

Transistor PolarityN ChannelContinuous Drain Current Id14A
Drain Source Voltage Vds60VOn Resistance Rds(on)100mohm
Rds(on) Test Voltage Vgs10VLeaded Process CompatibleYes
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
DPAK
IPAK
(TO-252)
(TO-251)
D
D
G
S
G
D S
G
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
e
Linear Derating Factor (PCB Mount)
b
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting T
= 25 °C, L = 541 μH, R
DD
J
≤ 17 A, dI/dt ≤ 110 A/μs, V
≤ V
c. I
SD
DD
DS
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90335
S10-1122-Rev. B, 10-May-10
IRFR020, IRFU020, SiHFR020, SiHFU020
Power MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
60
Definition
0.10
• Dynamic dV/dt Rating
25
• Surface Mount (IRFR020, SiHFR020)
• Available in Tape and Reel
5.8
• Fast Switching
11
• Ease of Paralleling
Single
• Simple Drive Requirements
D
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
S
phase, infrared, or wave soldering techniques.
N-Channel MOSFET
DPAK (TO-252)
DPAK (TO-252)
SiHFR020-GE3
SiHFR020TR-GE3
IRFR020PbF
IRFR020TRPbF
SiHFR020-E3
SiHFR020T-E3
IRFR020
IRFR020TR
SiHFR020
SiHFR020T
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
e
T
= 25 °C
A
for 10 s
= 25 Ω, I
= 14 A (see fig. 12).
g
AS
≤ 150 °C.
, T
J
Vishay Siliconix
device
design,
low
on-resistance
IPAK (TO-251)
SiHFU020-GE3
a
IRFU020PbF
a
SiHFU020-E3
a
IRFU020
a
SiHFU020
SYMBOL
LIMIT
V
60
DS
V
± 20
GS
14
I
D
9.0
I
56
DM
0.33
0.020
E
91
AS
42
P
D
2.5
dV/dt
5.5
T
, T
- 55 to + 150
J
stg
d
260
www.vishay.com
and
UNIT
V
A
W/°C
mJ
W
V/ns
°C
1

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IRFR020TRLPBF Summary of contents

  • Page 1

    ... Ease of Paralleling Single • Simple Drive Requirements D • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized cost-effectiveness. The DPAK is designed for surface mounting using vapor S phase, infrared, or wave soldering techniques. ...

  • Page 2

    ... IRFR020, IRFU020, SiHFR020, SiHFU020 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

  • Page 3

    ... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 90335 S10-1122-Rev. B, 10-May-10 IRFR020, IRFU020, SiHFR020, SiHFU020 = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

  • Page 4

    ... IRFR020, IRFU020, SiHFR020, SiHFU020 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 90335 S10-1122-Rev. B, 10-May-10 ...

  • Page 5

    ... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 90335 S10-1122-Rev. B, 10-May-10 IRFR020, IRFU020, SiHFR020, SiHFU020 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms Vishay Siliconix D.U. d(off) f www.vishay.com 5 ...

  • Page 6

    ... IRFR020, IRFU020, SiHFR020, SiHFU020 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current V DS ...

  • Page 7

    ... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90335. Document Number: 90335 S10-1122-Rev ...

  • Page 8

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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