IRFR210TRLPBF Vishay, IRFR210TRLPBF Datasheet
IRFR210TRLPBF
Specifications of IRFR210TRLPBF
Related parts for IRFR210TRLPBF
IRFR210TRLPBF Summary of contents
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... The straight S lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W N-Channel MOSFET are possible in typical surface mount applications. DPAK (TO-252) DPAK (TO-252) a SiHFR210TRL-GE3 - a IRFR210TRLPbF IRFR210TRPbF a SiHFR210TL-E3 SiHFR210T-E3 a IRFR210TRL IRFR210TR a SiHFR210TL SiHFR210T = 25 °C, unless otherwise noted ...
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... IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91268 S10-1122-Rev. D, 10-May-10 IRFR210, IRFU210, SiHFR210, SiHFU210 = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...
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... IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91268 S10-1122-Rev. D, 10-May-10 ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91268 S10-1122-Rev. D, 10-May-10 IRFR210, IRFU210, SiHFR210, SiHFU210 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms Vishay Siliconix D.U. d(off) f www.vishay.com 5 ...
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... IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current V DS ...
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... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91268. Document Number: 91268 S10-1122-Rev ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...