P CHANNEL MOSFET, -50V, 9.9A, D-PAK

IRFR9020TRLPBF

Manufacturer Part NumberIRFR9020TRLPBF
DescriptionP CHANNEL MOSFET, -50V, 9.9A, D-PAK
ManufacturerVishay
IRFR9020TRLPBF datasheet
 


Specifications of IRFR9020TRLPBF

Transistor PolarityP ChannelContinuous Drain Current Id-9.9A
Drain Source Voltage Vds-50VOn Resistance Rds(on)280mohm
Rds(on) Test Voltage Vgs-10VLeaded Process CompatibleYes
ConfigurationSingleResistance Drain-source Rds (on)0.28 Ohms
Drain-source Breakdown Voltage- 50 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current9.9 APower Dissipation42 W
Maximum Operating Temperature+ 150 CMounting StyleSMD/SMT
Package / CaseDPAKFall Time25 ns
Minimum Operating Temperature- 55 CRise Time67 ns
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= - 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
DPAK
IPAK
(TO-252)
(TO-251)
D
D
S
D S
G
G
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and Halogen-free
SiHFR9020-GE3
IRFR9020PbF
Lead (Pb)-free
SiHFR9020-E3
IRFR9020
SnPb
SiHFR9020
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90350
S10-1135-Rev. C, 10-May-10
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Power MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
- 50
Definition
0.28
• Surface
SiHFR9020)
14
• Straight Lead Option (Order As IRFU9020,
6.5
SiHFU9020)
6.5
• Repetitive Avalanche Ratings
Single
• Dynamic dV/dt Rating
S
• Simple Drive Requirements
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
G
DESCRIPTION
The Power MOSFET technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance
D
combined with high transconductance; superior reverse
P-Channel MOSFET
energy and diode recovery dV/dt.
The Power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The TO-252
surface mount package brings the advantages of Power
MOSFET’s to high volume applications where PC Board
surface mounting is desirable. The surface mount option
IRFR9020, SiHFR9020 is provided on 16mm tape. The
straight lead option IRFU9020, SiHFU9020 of the device is
called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, dc-to-dc converters, and a
wide range of consumer products.
DPAK (TO-252)
SiHFR9020TR-GE3
a
IRFR9020TRPbF
a
SiHFR9020T-E3
a
IRFR9020TR
a
SiHFR9020T
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at - 10 V
GS
T
= 100 °C
C
Vishay Siliconix
Mountable
(Order
As
IRFR9020,
DPAK (TO-252)
IPAK (TO-251)
a
a
SiHFR9020TRL-GE3
SiHFU9020-GE3
a
IRFR9020TRLPbF
IRFU9020PbF
a
SiHFR9020TL-E3
SiHFU9020-E3
a
IRFR9020TRL
IRFU9020
a
SiHFR9020TL
SiHFU9020
SYMBOL
LIMIT
V
- 50
DS
V
± 20
GS
- 9.9
I
D
- 6.3
I
- 40
DM
0.33
www.vishay.com
UNIT
V
A
W/°C
1

IRFR9020TRLPBF Summary of contents

  • Page 1

    ... DPAK (TO-252) SiHFR9020TR-GE3 a IRFR9020TRPbF a SiHFR9020T-E3 a IRFR9020TR a SiHFR9020T = 25 °C, unless otherwise noted ° 100 °C C Vishay Siliconix Mountable (Order As IRFR9020, DPAK (TO-252) IPAK (TO-251 SiHFR9020TRL-GE3 SiHFU9020-GE3 a IRFR9020TRLPbF IRFU9020PbF a SiHFR9020TL-E3 SiHFU9020-E3 a IRFR9020TRL IRFU9020 a SiHFR9020TL SiHFU9020 SYMBOL LIMIT ± 9 6 0.33 www.vishay.com UNIT V A W/°C 1 ...

  • Page 2

    ... IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS T PARAMETER b Single Pulse Avalanche Energy a Repetitive Avalanche Current a Repetitive Avalanche Energy Maximum Power Dissipation c Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). ...

  • Page 3

    ... SYMBOL TEST CONDITIONS MOSFET symbol I S showing the integral reverse junction diode ° 9 ° 9,7 A, dI/dt = 100 A/μ Intrinsic turn-on time is negligible (turn-on is dominated Vishay Siliconix MIN. TYP. MAX 9 6 110 280 b 0.17 0.34 0.85 and L S Fig Typical Saturation Characteristics Fig ...

  • Page 4

    ... IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Vishay Siliconix Fig Typical Transconductance vs. Drain Current Fig Typical Source-Drain Diode Forward Voltage www.vishay.com 4 Fig Breakdown Voltage vs. Temperature Fig Normalized On-Resistance vs. Temperature Document Number: 90350 S10-1135-Rev. C, 10-May-10 ...

  • Page 5

    ... Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 90350 S10-1135-Rev. C, 10-May-10 IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Fig Typical On-Resistance vs. Drain Current Fig Maximum Drain Current vs. Case Temperature Vishay Siliconix www.vishay.com 5 ...

  • Page 6

    ... IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Vishay Siliconix Fig. 13a - Maximum Avalanche vs. Starting Junction Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration www.vishay.com 6 Fig. 13b - Unclamped Inductive Test Circuit Fig. 13c - Unclamped Inductive Waveforms Document Number: 90350 S10-1135-Rev. C, 10-May-10 ...

  • Page 7

    ... Fig. 15a - Switching Time Waveforms Charge Fig. 16a - Basic Gate Charge Waveform Document Number: 90350 S10-1135-Rev. C, 10-May-10 IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 t t d(off) f Vishay Siliconix Fig. 15b - Switching Time Test Circuit Fig. 16b - Gate Charge Test Circuit www.vishay.com 7 ...

  • Page 8

    ... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90350. www.vishay.com ...

  • Page 9

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...