IRFR9020TRLPBF Vishay, IRFR9020TRLPBF Datasheet - Page 3

• Manufacturer Part Number: IRFR9020TRLPBF
• Description: P CHANNEL MOSFET, -50V, 9.9A, D-PAK
• Manufacturer: Vishay

Specifications of IRFR9020TRLPBF

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -9.9A
• Drain Source Voltage Vds: -50V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: -10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.28 Ohms
• Drain-source Breakdown Voltage: - 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.9 A
• Power Dissipation: 42 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Fall Time: 25 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 67 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 90350
S10-1135-Rev. C, 10-May-10
SPECIFICATIONS T
PARAMETER
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Fig. 2 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics
J
= 25 °C, unless otherwise noted
a
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
SYMBOL
V
I
Q
t
SM
I
t
SD
on
S
rr
rr
T
MOSFET symbol
showing the
integral reverse
p - n junction diode
J
= 25 °C, I
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
= 25 °C, I
TEST CONDITIONS
F
= - 9,7 A, dI/dt = 100 A/μs
S
= - 9.9 A, V
Fig. 3 - Typical Saturation Characteristics
Fig. 4 - Maximum Safe Operating Area
GS
G
= 0 V
b
S
D
b
MIN.
0.17
56
-
-
-
Vishay Siliconix
TYP.
0.34
110
-
-
-
www.vishay.com
MAX.
- 9.9
- 6.3
0.85
- 40
280
S
and L
D
UNIT
)
nC
ns
A
V
3