NTE276 NTE ELECTRONICS, NTE276 Datasheet

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NTE276

Manufacturer Part Number
NTE276
Description
THYRISTOR,GTO,1.2kV V(DRM),TO-66
Manufacturer
NTE ELECTRONICS
Datasheet
Features:
D Gate Turn−Off Thyristor
D High Speed Power Switching
D TV Horizontal Output
D Inverter and Converter Application
D Supplied in a Japanese TO66 Type Package
Absolute Maximum Ratings: (T
Non−Repetitive Peak Off−State Voltage (T
Repetitive Peak Off−State Voltage (T
DC On−State Anode Current (T
Surge On−State Current (T
Peak Forward Gate Current (T
Average Forward Gate Power Dissipation (T
Peak Reverse Gate Power Dissipation (T
Average Reverse Gate Power Dissipation (T
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Case, R
Electrical Characteristics: (T
Controllable Anode Current
On−State Voltage
Gate Trigger Voltage
Gate Trigger Current
t = 100µs
t = 1ms
Typical
Maximum
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Controlled Rectifier (SCR)
C
C
= +25°C), P
= +60°C), I
C
stg
A
C
= +60°C, t = 1ms), I
Gate Controlled Switch
= +25°C unless otherwise specified)
= +60°C), I
A
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C unless otherwise specified)
V
I
I
J
V
TC
GT
GT
T
= −40° to +120°C, V
TSM
T
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
J
thJC
= +60°C, t = 5µs), P
V
I
V
V
NTE276
= −40° to +120°C, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
T
C
D
D
D
= 5A, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +60°C), P
= +60°C), P
= 100V, V
= 10V
= 10V
Test Conditions
GF
GFM
= 300mA
GR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GF(AV)
GR(AV)
= 9V, R
GK
= 0), V
GRM
GK
g
. . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . .
= 0
= 0), V
DRM
. . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . .
DSM
Min
25
. . . . . . . . . . .
Typ
−40° to +120°C
−50° to +120°C
Max Unit
120
5.3
1.5
1.3°C/W
2.0°C/W
1400V
1250V
47.5W
mA
30W
A
V
V
80A
33A
1W
2W
5A
4A

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NTE276 Summary of contents

Page 1

... Electrical Characteristics: (T Parameter Controllable Anode Current On−State Voltage Gate Trigger Voltage Gate Trigger Current NTE276 Gate Controlled Switch = +25°C unless otherwise specified −40° to +120° −40° to +120° +60° ...

Page 2

Electrical Characteristics (Cont’d): (T Parameter Latching Current Holding Current Turn−Off Current Gain Off−State Anode Current Turn−On Time Turn−Off Time Critical rate of Rise of Off−State Voltage Gate Breakdown Voltage .062 (1.57) .161 (4.1) Dia (2 Places) .141 (3.69) R .350 ...

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