NTE5481

Manufacturer Part NumberNTE5481
DescriptionSILICON CONTROLLED RECTIFIER,50V V(DRM),8A I(T),TO-208AB
ManufacturerNTE ELECTRONICS
NTE5481 datasheets

Availability: By request

International delivery:

Warranty: 60 days

Shipping & payment terms

Added to cart

 
1
Page 1
2
Page 2
3
Page 3
Page 1/3

Download datasheet (53Kb)Embed
Next
Silicon Controlled Rectifier (SCR)
Description:
The NTE5480 through NTE5487 are multi−purpose PNPN silicon controlled rectifiers in a TO64 type
package suited for industrial and consumer applications. These 8 amp devices are available in volt-
ages ranging from 25V to 600V.
Features:
D Uniform Low−Level Noise−Immune Gate Triggering: I
D Low Forward “ON” Voltage: v
D High Surge−Current Capability: I
D Shorted Emitter Construction
Absolute Maximum Ratings: (T
Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), V
NTE5480
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5481
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5482
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5483
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5484
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5485
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5486
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5487 (This device is discontinued)
Forward Current RMS, I
T(RMS)
Peak Forward Surge Current (One Cycle, 60Hz, T
Circuit Fusing (t ≤ 8.3ms, T
J
Peak Gate Power, P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GM
Average Gate Power, P
G(AV)
Peak Gate Current, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GM
Peak Gate Voltage (Note 2), V
Operating Temperature Range, T
Storage Temperature Range, T
Typical Thermal Resistance, Junction−to−Case, R
Typical Thermal Resistance, Case−to−Ambient, R
Note 1. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking
capability in a manner such that the voltage applied exceeds the rated blocking voltage.
Note 2. Devices should not be operated with a positive bias applied to the gate concurrently with a
negative potential applied to the anode.
NTE5480 thru NTE5487
8 Amp, TO64
= 1V Typ @ 5A @ +25°C
T
= 100A Peak
TSM
= −40° to +100°C unless otherwise specified)
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= −40° to +100°C, I
J
2
= −40° to +100°C), I
t
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
= 10mA Typ @ T
= +25°C
GT
C
or V
DRM
RRM
. . . . . . . . . . . . . . .
TSM
−40° to +100°C
−40° to +150°C
25V
50V
100V
200V
300V
400V
500V
600V
8A
100A
2
40A
s
5W
0.5W
2A
10V
1.5°C/W
50°C/W

NTE5481 Summary of contents

  • Page 1

    ... NTE5481 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

  • Page 2

    Parameter Peak Forward or Reverse Blocking Current Gate Trigger Current (Continuous DC) Gate Trigger Voltage (Continuous DC) Forward “ON” Voltage Holding Current Turn−On Time ( Turn−Off Time Forward Voltage Application Rate (Exponential) Note 3. For ...

  • Page 3

    Max Gate .855 (21.7) Max .453 (111.5) Max 10−32 UNF−2A Cathode .125 (3.17) Max Anode ...