SCR THYRISTOR, 470A, 600V, TO-200AB

 

NTE5591

Manufacturer Part NumberNTE5591
DescriptionSCR THYRISTOR, 470A, 600V, TO-200AB
ManufacturerNTE ELECTRONICS
NTE5591 datasheets

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Specifications of NTE5591

Peak Repetitive Off-state Voltage, Vdrm600VGate Trigger Current Max, Igt150mA
Current It Av470AOn State Rms Current It(rms)780A
Peak Non Rep Surge Current Itsm 50hz5.12kALead Free Status / RoHS StatusLead free / RoHS Compliant
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NTE5590, NTE5591, NTE5592, NTE5597
Silicon Controlled Rectifier (SCR)
Absolute Maximum Ratings: (T
Repetitive Peak Voltages, V
NTE5590
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5591
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5592
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5597
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Non−Repetitive Peak Reverse Blocking Voltage, V
NTE5590
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5591
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5592
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5597
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average On−State Current (Half Sine Wave), I
T
= +55°C (Double Side Cooled)
hs
T
= +85°C (Single Side Cooled)
hs
RMS On−State Current (T
hs
Continuous On−State Current (T
Peak One−Cycle Surge (10ms duration, 60% V
Non−Repetitive On−State Current (10ms duration, V
Maximum Permissible Surge Energy (V
10ms duration
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3ms duration
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Gate Current (Anode positive with respect to cathode), I
Peak Forward Gate Voltage (Anode positive with respect to cathode), V
Peak Reverse Gate Voltage, V
Average Gate Power, P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G
Peak Gate Power (100μs pulse width), P
Rate of Rise of Off−State Voltage (To 80% V
Rate of Rise of On−State Current, di/dt
(Gate drive 20V, 20Ω with t
Repetitive
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Non−Repetitive
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Heatsink, R
(For a device with a maximum forward voltage drop characteristic)
Double Side Cooled
Single Side Cooled
470 Amp, TO200AB
= +125°C unless otherwise specified)
J
, V
, V
RRM
DRM
DSM
RSM
T(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C, Double Side Cooled), I
= +25°C, Double Side Cooled), I
hs
re−applied), I
RRM
≤ 10V), I
R
2
≤ 10V), I
t
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RGM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GM
gate open−circuit), dv/dt
DRM
≤ 1μs, anode voltage ≤ 80% V
r
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
hs
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
th(j−hs)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . .
T(RMS)
. . . . . . . . . . . . . . . . . . . .
T
. . . . . . . . . . . . . . . . .
TSM (1)
. . . . . . . . . . . . . . . . . . .
TSM (2)
131000A
. . . . . . . . . . . . . . . .
FGM
. . . . . . . . . . . . . . .
FGM
. . . . . . . . . . . . .
)
DRM
−40° to +125°C
−40° to +150°C
0.095°C/W
0.190°C/W
200V
600V
1200V
1600V
300V
700V
1300V
1700V
470A
160A
780A
668A
4650A
5120A
2
s
2
97350A
s
19A
18V
5V
2W
100W
200V/μs
500A/μs
1000A/μs

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NTE5591 Summary of contents

  • Page 1

    ... NTE5590, NTE5591, NTE5592, NTE5597 Silicon Controlled Rectifier (SCR) Absolute Maximum Ratings: (T Repetitive Peak Voltages, V NTE5590 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

  • Page 2

    Peak On−State Voltage (I TM Forward Conduction Threshold Voltage, V Forward Conduction Slope Resistance, r Repetitive Peak Off−State Current (At V Repetitive Peak Reverse Current (At V Maximum Gate Current (V A Maximum Gate Voltage (V A Maximum Holding Current ...

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