2N3019 NTE ELECTRONICS, 2N3019 Datasheet
2N3019
Manufacturer Part Number
2N3019
Description
BIPOLAR TRANSISTOR, NPN, 80V
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE129MCP.pdf
(3 pages)
Specifications of 2N3019
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
80V
Transition Frequency Typ Ft
400MHz
Power Dissipation Pd
800mW
Dc Collector Current
1A
Dc Current Gain Hfe
300
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N3019
Manufacturer:
ASI
Quantity:
20 000
Description:
The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type pack-
age designed primarily for amplifier and switching applications. These devices features high break-
down voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current
range.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Lead Temperature (During Soldering, 1/16” from case, 60sec max), T
Note 1. NTE129MCP is a matched complementary pair containing 1 each of NTE128 (NPN) and
NTE128
NTE129
NTE128
NTE129
NTE128
NTE129
NTE128
NTE129
NTE128
NTE129
NTE128
NTE129
NTE129 (PNP).
Derate Above 25 C
Derate Above 25 C
Derate Above 25 C
Derate Above 25 C
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Silicon Complementary Transistors
EBO
CBO
A
C
NTE128 (NPN) & NTE129 (PNP)
CEO
= +25 C), P
= +25 C), P
Audio Output, Video, Driver
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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stg
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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D
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
L
. . . . . . . . . . . . . . . . .
–65 to +200 C
–65 to +200 C
7.15mW/ C
28.6mW/ C
4.6mW/ C
40mW/ C
16.5 C/W
89.5 C/W
140 C/W
20 C/W
+300 C
1.25W
140V
0.8W
80V
80V
5W
7W
7V
5V
1A
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2N3019 Summary of contents
Page 1
NTE128 (NPN) & NTE129 (PNP) Silicon Complementary Transistors Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type pack- age designed primarily for amplifier and switching applications. These devices features high break- down voltages, low ...
Page 2
Electrical Characteristics: (T Parameter OFF Characteristics Collector–Emitter Breakdown Voltage NTE128 NTE129 Collector–Base Breakdown Voltage NTE128 NTE129 Emitter–Base Breakdown Voltage NTE128 NTE129 Collector Cutoff Current NTE128 NTE129 Emitter Cutoff Current NTE128 NTE129 ON Characteristics (Note 2) DC Current Gain NTE128 NTE129 ...
Page 3
Electrical Characteristics (Cont’d): T Parameter Small–Signal Characteristics Current–Gain – Bandwidth Product (NTE128 Only) Output Capacitance NTE128 NTE129 Input Capacitance NTE128 NTE129 Small–Signal Current Gain NTE128 NTE129 Collector–Base Time Constant (NTE128 Only) Noise Figure (NTE128 Only) Switching Characteristics (NTE129 Only) Storage ...