BIPOLAR TRANSISTOR, NPN, 60V TO-220

MJE3055T

Manufacturer Part NumberMJE3055T
DescriptionBIPOLAR TRANSISTOR, NPN, 60V TO-220
ManufacturerMULTICOMP
MJE3055T datasheet
 


Specifications of MJE3055T

Transistor PolarityNPNCollector Emitter Voltage V(br)ceo60V
Transition Frequency Typ Ft2MHzPower Dissipation Pd75mW
Dc Collector Current10ADc Current Gain Hfe100
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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MJE2955T, 3055T
Complementary Power Transistors
Pin 1. Base
2. Collector
3. Emitter
4. Collector (Case).
Complementary Silicon Power Transistors are designed for use in general-purpose
amplifier and switching applications.
Features:
• Power dissipation-P
= 75W at T
D
• DC current gain hFE = 20 (Minimum) at I
• V
= 1.1V (Maximum) at I
= 4.0A, I
CE(sat)
C
Dimensions
Minimum
Maximum
A
14.68
15.31
B
9.78
10.42
C
5.01
6.52
D
13.06
14.62
E
3.57
4.07
F
2.42
3.66
G
1.12
1.36
H
0.72
0.96
I
4.22
4.98
J
1.14
1.38
K
2.20
2.97
L
0.33
0.55
M
2.48
2.98
O
3.70
3.90
Dimensions : Millimetres
Page 1
= 25°C.
C
= 4.0A.
C
= 400mA.
B
PNP
NPN
MJE2955T
MJE3055T
10 Ampere
Complemetary Silicon
Power Transistors
60 Volts
75 Watts
TO-220
31/05/05 V1.0

MJE3055T Summary of contents

  • Page 1

    ... F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 Dimensions : Millimetres Page 1 = 25° 4.0A 400mA. B PNP NPN MJE2955T MJE3055T 10 Ampere Complemetary Silicon Power Transistors 60 Volts 75 Watts TO-220 31/05/05 V1.0 ...

  • Page 2

    MJE2955T, 3055T Complementary Power Transistors Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Total Power Dissipation 25°C C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Characteristic Characteristic Thermal Resistance ...

  • Page 3

    MJE2955T, 3055T Complementary Power Transistors Electrical Characteristics (T Parameter Off Characteristics Collector-Emitter Sustaining Voltage ( 200mA Collector Cut off Current (V = 30V Collector Cut off Current (V ...

  • Page 4

    ... The data of Figure - 3 is based on T variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Page 4 MJE3055T -V limits 150° ...

  • Page 5

    ... MJE2955T, 3055T Complementary Power Transistors Figure - 4 DC Current Gain Specifications I V C(av) CEO maximum maximum (A) ( tot minimum at 25° ( Page 5 Type Part Number NPN MJE3055T PNP MJE2955T 31/05/05 V1.0 ...

  • Page 6

    ... Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. © Premier Farnell plc 2004. ...