NTE2310 NTE ELECTRONICS, NTE2310 Datasheet
NTE2310
Manufacturer Part Number
NTE2310
Description
BIPOLAR TRANSISTOR, NPN, 450V, TO-218
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2310.pdf
(2 pages)
Specifications of NTE2310
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
450V
Power Dissipation Pd
125W
Dc Collector Current
8A
Dc Current Gain Hfe
10
Operating Temperature Range
-65°C To +175°C
Description:
The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for
use in high voltage, fast switching industrial applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage (V
Collector–Emitter Voltage (I
Collector Current, I
Base Current, I
Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Charactertistics: (T
Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 1.5%.
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Turn–On Time
Storage Time
Fall Time
Continuous
Peak (t
Continuous
Peak (t
Parameter
p
p
B
2ms)
2ms)
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Voltage, High Speed Switch
B
BE
= 0), V
stg
= 0), V
C
Silicon NPN Transistor
= +25 C unless otherwise specified)
V
D
Symbol
V
V
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO(sus)
I
CE(sat)
BE(sat)
CEO
I
CES
EBO
t
t
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
on
t
s
f
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
NTE2310
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
V
V
V
I
I
I
C
C
C
C
CE
CE
EB
= 100mA, L = 25mH, Note 1
= 6A, I
= 6A, I
= 6A, I
= 1000V, V
= 9V, I
= 1000V, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
B
B
B1
C
= 1.2A, Note 1
= 1.2A, Note 1
= 1.2A, I
= 0
BE
BE
= 0, T
= 0
B2
= 1.2A
C
= +125 C
Min
400
–
–
–
–
–
–
–
–
Typ
–
–
–
–
–
–
–
–
–
–65 to +175 C
Max
1.5
1.5
0.8
10
–
1
3
1
4
1.2 C/W
+175 C
1000V
125W
Unit
450V
mA
mA
mA
V
V
V
20A
s
s
s
8A
4A
6A
Related parts for NTE2310
NTE2310 Summary of contents
Page 1
... High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings: Collector–Emitter Voltage (V Collector–Emitter Voltage (I Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
C .156 (3.96) Dia .055 (1.4) .216 (5.45) .060 (1.52) .173 (4.4) .550 (13.97) .430 (10.92) .500 (12.7) Min NOTE: Dotted line indicates that case may have square corners .015 (0.39) ...