NTE2504 NTE ELECTRONICS, NTE2504 Datasheet

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NTE2504

Manufacturer Part Number
NTE2504
Description
BIPOLAR TRANSISTOR, NPN, 25V
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE2504

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
25V
Transition Frequency Typ Ft
260MHz
Power Dissipation Pd
200mW
Dc Collector Current
100mA
Dc Current Gain Hfe
475
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features:
D Large Current Capacity (I
D Adoption of MBIT Process
D High DC Current Gain: h
D Low Collector–Emitter Saturation Voltage: V
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Dissipation, P
Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain–Bandwidth Product
Output Capacitance
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
EBO
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
CEO
FE
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Gain Audio Amplifier
= 2A)
stg
A
= 800 to 3200
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
V
Symbol
V
V
(BR)CBO
I
I
CE(sat)
BE(sat)
h
C
CBO
EBO
f
FE
T
ob
NTE2504
V
V
V
V
V
I
I
I
C
C
C
CB
EB
CE
CE
CE
= 1A, I
= 1A, I
= 10A, I
CE(sat)
= 10V, I
= 20V, I
= 5V, I
= 10V, I
= 10V, f = 1MHz
Test Conditions
B
B
E
= 20mA
= 20mA
C
C
E
C
= 0
= 500mA
0.5V
= 0
= 0
= 50mA
Min
800
30
1500 3200
0.15
0.85
Typ
260
–55 to +150 C
27
Max Unit
0.1
0.1
0.5
1.2
+150 C
1.2W
MHz
pF
30V
25V
15V
V
V
V
A
A
2A
4A

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NTE2504 Summary of contents

Page 1

... Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current Gain–Bandwidth Product Output Capacitance Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Collector–Base Breakdown Voltage NTE2504 Silicon NPN Transistor High Gain Audio Amplifier = 2A 800 to 3200 FE CE(sat) = +25 C unless otherwise specified) A ...

Page 2

.610 (15.5) .094 (2.4) .106 (2.7) ...

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