NTE272 NTE ELECTRONICS, NTE272 Datasheet
NTE272
Manufacturer Part Number
NTE272
Description
DARLINGTON TRANSISTOR, NPN, 40V
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE272.pdf
(2 pages)
Specifications of NTE272
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
40V
Power Dissipation Pd
1W
Dc Collector Current
2A
Dc Current Gain Hfe
65000
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Description:
The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type
case designed for use in complementary amplifiers and driver applications.
Features:
D High DC Current Gain:
D Collector−Emitter Breakdown Voltage:
D Low Collector−Emitter Saturation Voltage:
D Monolithic Construction for High Reliability
Absolute Maximum Ratings:
Collector−Emitter Voltage (Note 2), V
Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Collector Current, I
Total Power Dissipation (T
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Ambient, R
Thermal Resistance, Junction−to−Case, R
Note 1. NTE273 is a discontinued device and no longer available.
Note 2. Due to the monolithic construction of this device, breakdown voltages of both transistor ele-
Derate above 25°C
Derate above 25°C
ments are identical. V
by noise pickup. The voltage measured during the V
transistor.
h
V
V
FE
(BR)CES
CE(sat)
= 25,000 (Min) @ I
= 15,000 (Min) @ I
= 1.5V @ I
C
= 40V @ I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Darlington Complementary
EB
A
CB
C
NTE272 (NPN) & NTE273 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C), P
CES
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
= 1A
(BR)CES
= 500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 200mA
= 500mA
Power Amplifiers
CEO
is tested in lieu of V
D
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)CEO
(BR)CES
in order to avoid errors caused
test is the V
(BR)CEO
−55 to +150°C
−55 to +150°C
of the output
80mW/°C
12.5°C/W
125°C/W
8mW/°C
10W
40V
40V
50V
12V
1W
2A
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NTE272 Summary of contents
Page 1
... NTE272 (NPN) & NTE273 (PNP) Silicon Darlington Complementary Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications. Features: D High DC Current Gain 25,000 (Min 15,000 (Min Collector−Emitter Breakdown Voltage: ...
Page 2
... Base−Emitter Saturation Voltage Base−Emitter ON Voltage Dynamic Characteristics Small−Signal Current Gain Collector−Base Capacitance Note 3. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%. NTE272 Schematic B NTE273 Schematic B Uniwatt darlington transistors can be used in any number of low power applications, such as relay drivers, motor control and as general purpose amplifiers ...