TIP140 MULTICOMP, TIP140 Datasheet

BIPOLAR TRANSISTOR, NPN, 60V

TIP140

Manufacturer Part Number
TIP140
Description
BIPOLAR TRANSISTOR, NPN, 60V
Manufacturer
MULTICOMP
Datasheet

Specifications of TIP140

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
60V
Power Dissipation Pd
125W
Dc Collector Current
10A
Dc Current Gain Hfe
1000
Operating Temperature Range
-65°C To +150°C
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TIP140
Manufacturer:
ON
Quantity:
5 000
Part Number:
TIP140
Manufacturer:
DC
Quantity:
15 000
Part Number:
TIP140
Manufacturer:
ST
0
Part Number:
TIP140G
Manufacturer:
ON
Quantity:
30 000
Part Number:
TIP140T
Manufacturer:
ST
0
Part Number:
TIP140T.
Manufacturer:
ST
0
Maximum Ratings
Thermal Characteristics
Thermal Resistance Junction to Case
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Total Power Dissipation at T
Operating and Storage Junction
Temperature Range
TIP140
Darlington Transistors
Derate above 25°C
Pin 1. Base
Characteristic
Characteristic
2. Collector
3. Emitter
Peak
C
= 25°C
T
Symbol
Symbol
J
V
V
V
Rθjc
, T
I
P
Dimension
CEO
CBO
EBO
CM
I
I
Features:
Designed for general-purpose amplifier and low speed switching applications.
• • Collector-Emitter sustaining voltage-V
• • Collector-Emitter saturation voltage-V
• • Monolithic construction with built-in-base-emitter shunt resistor.
C
B
D
STG
G
M
O
A
B
C
D
E
H
K
N
P
F
J
L
I
-65 to +150
Maximum
TIP140
125
5.0
0.5
1.0
1.0
60
10
15
Minimum
20.63
15.38
14.81
18.50
11.72
1.90
5.10
4.20
1.82
2.92
0.89
5.26
4.68
2.40
3.25
0.55
Page 1
Dimensions : Millimetres
W/°C
°C/W
Unit
Unit
°C
W
V
A
A
Maximum
22.38
16.20
15.22
12.84
21.50
2.70
6.10
4.50
2.46
3.23
1.53
5.66
5.36
2.80
3.65
0.70
CE (sat)
CEO (sus)
= 2.5V (Maximum) at I
= 60V (Minimum) - TIP140
Complementary Silicon
Power Transistors
TO-247 (3P)
10 Ampere
Darlington
125 Watts
60 Volts
TIP140
NPN
C
= 5.0A.
08/05/06 V1.0

Related parts for TIP140

TIP140 Summary of contents

Page 1

... V V CBO V 5.0 EBO 0 125 1.0 W/° -65 to +150 °C J STG Symbol Maximum Unit Rθjc 1.0 °C/W Page 1 = 60V (Minimum) - TIP140 CEO (sus) = 2.5V (Maximum 5.0A. CE (sat) C NPN TIP140 10 Ampere Darlington Complementary Silicon Power Transistors 60 Volts 125 Watts TO-247 (3P) 08/05/06 V1.0 ...

Page 2

... TIP140 Darlington Transistors Figure 1 Power Derating Electrical Characteristics (T Characteristic OFF Characteristics Collector-Emitter Sustaining Voltage ( 30mA Collector Cut off Current (V = 30V Collector Cut off Current (V = 60V Emitter Cut off Current (V =5.0V Characteristics (1) DC Current Gain (I = 5.0A 4.0V 10A 40V Collector-Emitter Saturation Voltage ( ...

Page 3

... TIP140 Darlington Transistors Internal Schematic Diagram Active Region Safe Operating Area (SOA) Small-Signal Common-Emitter Forward Current Transfer Ratio There are two limitation on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate I -V limits of the transistor that must be observed for ...

Page 4

... TIP140 Darlington Transistors Switching Time Collector-Emitter Saturation Voltage Specifications (av) CEO maximum maximum ( tot minimum at 25° (W) c 1000 125 Page 4 DC Current Gain Base-Emitter Voltage Package Type Part Number TO-220 NPN 08/05/06 V1.0 TIP140 ...

Page 5

... TIP140 Darlington Transistors Notes: International Sales Offices: AUSTRALIA – Farnell InOne Tel No 9645 8888 Fax No 9644 7898 AUSTRIA – Farnell InOne Tel No 662 2180 680 Fax No 662 2180 670 BELGIUM – Farnell InOne Tel No 475 2810 Fax No 227 3648 BRAZIL – Farnell-Newark InOne ...

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