BD135 MULTICOMP, BD135 Datasheet
BD135
Manufacturer Part Number
BD135
Description
BIPOLAR TRANSISTOR, NPN, 45V
Manufacturer
MULTICOMP
Datasheet
1.BD135.pdf
(4 pages)
Specifications of BD135
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
45V
Power Dissipation Pd
1.25W
Dc Collector Current
1A
Dc Current Gain Hfe
40
No. Of Pins
3
No. Of Transistors
1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BD135
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Part Number:
BD13516S
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
BD135G
Manufacturer:
ON Semiconductor
Quantity:
355
Part Number:
BD135G
Manufacturer:
ON/安森美
Quantity:
20 000
©2000 Fairchild Semiconductor International
Medium Power Linear and Switching
Applications
• Complement to BD136, BD138 and BD140 respectively
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
I
I
I
P
I
h
h
V
V
P
T
T
V
I
h
V
V
FE
C
CP
B
EBO
CBO
FE1
FE2
FE3
EBO
C
J
STG
CEO
CBO
CEO
C
Symbol
CE
BE
Symbol
(on)
(sat)
Classification
(sus)
Classification
h
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
FE3
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
: ALL DEVICE
: BD135
: BD137, BD139
: ALL DEVICE
T
: BD135
: BD137
: BD139
C
a
C
=25 C unless otherwise noted
=25 C)
BD135/137/139
T
=25 C)
Parameter
40 ~ 100
C
=25 C unless otherwise noted
6
: BD137
: BD139
: BD137
: BD139
: BD135
: BD135
I
V
V
V
I
V
V
V
C
C
CB
EB
CE
CE
CE
CE
= 30mA, I
= 500mA, I
Test Condition
= 5V, I
= 30V, I
= 2V, I
= 2V, I
= 2V, I
= 2V, I
63 ~ 160
C
C
C
C
C
B
E
= 0
= 5mA
= 0.5A
= 150mA
= 0.5A
10
B
= 0
= 0
= 50mA
1
1. Emitter
Min.
- 55 ~ 150
45
60
80
25
25
40
40
Value
12.5
1.25
150
2.Collector
1.5
3.0
0.5
45
60
80
45
60
80
5
Typ.
100 ~ 250
TO-126
16
Max.
250
160
0.1
0.5
10
3.Base
1
Rev. A, February 2000
Units
W
W
V
V
V
V
V
V
V
A
A
A
C
C
Units
V
V
V
V
V
A
A
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BD135 Summary of contents
Page 1
... BD137 : BD139 : BD135 : BD137 : BD139 = = =25 C unless otherwise noted C Test Condition : BD135 I = 30mA BD137 : BD139 V = 30V 5V ALL DEVICE ALL DEVICE BD135 BD137, BD139 I = 500mA 2V 100 63 ~ 160 TO-126 1 1. Emitter 2.Collector 3.Base Value Units 1.5 3.0 0.5 12.5 1.25 ...
Page 2
Typical Characteristics 100 100 I [mA], COLLECTOR CURRENT C Figure 1. DC current Gain 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1E-3 0.01 0.1 I ...
Page 3
Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2000 Fairchild Semiconductor International TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...
Page 4
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ...