BD138 MULTICOMP, BD138 Datasheet
Home Discrete Semiconductor Products Transistors (BJT) - Single BD138
Manufacturer Part Number
BD138
Description
BIPOLAR TRANSISTOR, PNP, -60V
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
60V
Power Dissipation Pd
1.25W
Dc Collector Current
1A
Dc Current Gain Hfe
40
No. Of Pins
3
No. Of Transistors
1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Manufacturer:
FAIRCHILD/仙童
Manufacturer:
FAIRCHILD/仙童
©2000 Fairchild Semiconductor International
Medium Power Linear and Switching
Applications
• Complement to BD136, BD138 and BD140 respectively
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
I
I
I
P
I
h
h
V
V
P
T
T
V
I
h
V
V
FE
C
CP
B
EBO
CBO
FE1
FE2
FE3
EBO
C
J
STG
CEO
CBO
CEO
C
Symbol
CE
BE
Symbol
(on)
(sat)
Classification
(sus)
Classification
h
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
FE3
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
: ALL DEVICE
: BD135
: BD137, BD139
: ALL DEVICE
T
: BD135
: BD137
: BD139
C
a
C
=25 C unless otherwise noted
=25 C)
BD135/137/139
T
=25 C)
Parameter
40 ~ 100
C
=25 C unless otherwise noted
6
: BD137
: BD139
: BD137
: BD139
: BD135
: BD135
I
V
V
V
I
V
V
V
C
C
CB
EB
CE
CE
CE
CE
= 30mA, I
= 500mA, I
Test Condition
= 5V, I
= 30V, I
= 2V, I
= 2V, I
= 2V, I
= 2V, I
63 ~ 160
C
C
C
C
C
B
E
= 0
= 5mA
= 0.5A
= 150mA
= 0.5A
10
B
= 0
= 0
= 50mA
1
1. Emitter
Min.
- 55 ~ 150
45
60
80
25
25
40
40
Value
12.5
1.25
150
2.Collector
1.5
3.0
0.5
45
60
80
45
60
80
5
Typ.
100 ~ 250
TO-126
16
Max.
250
160
0.1
0.5
10
3.Base
1
Rev. A, February 2000
Units
W
W
V
V
V
V
V
V
V
A
A
A
C
C
Units
V
V
V
V
V
A
A
Related parts for BD138
BD138 Summary of contents
... Medium Power Linear and Switching Applications • Complement to BD136, BD138 and BD140 respectively NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Symbol V Collector-Base Voltage CBO V Collector-Emitter Voltage CEO V Emitter-Base Voltage EBO I Collector Current (DC Collector Current (Pulse Base Current B P Collector Dissipation ( Collector Dissipation (T ...
Typical Characteristics 100 100 I [mA], COLLECTOR CURRENT C Figure 1. DC current Gain 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1E-3 0.01 0.1 I ...
Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2000 Fairchild Semiconductor International TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ...
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