BUL310FP STMicroelectronics, BUL310FP Datasheet

TRANSISTOR, NPN, TO-220FP

BUL310FP

Manufacturer Part Number
BUL310FP
Description
TRANSISTOR, NPN, TO-220FP
Manufacturer
STMicroelectronics
Datasheet

Specifications of BUL310FP

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
500V
Power Dissipation Pd
36W
Dc Collector Current
5A
Transistor Case Style
TO-220FP
No. Of Pins
3
Svhc
No SVHC (15-Dec-2010)
Collector
RoHS Compliant
Dc Current Gain Hfe
10
Rohs Compliant
Yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUL310FP
Manufacturer:
ST
Quantity:
12 500
Part Number:
BUL310FP
Manufacturer:
ST
0
APPLICATIONS
DESCRIPTION
The BUL310FP is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
April 2003
Symbol
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125
LARGE RBSOA
FULLY MOLDED INSULATED PACKAGE
2000 V DC INSULATION (U.L. COMPLIANT)
HORIZONTAL DEFLECTION FOR COLOUR
TV
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
V
V
V
T
P
I
I
CES
CEO
EBO
I
CM
I
BM
T
stg
C
B
tot
j
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at Tc = 25
Storage Temperature
Max. Operating Junction Temperature
®
Parameter
p
<5 ms)
C
p
= 0)
<5 ms)
o
B
C
BE
o
= 0)
C
HIGH VOLTAGE FAST-SWITCHING
= 0)
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
Value
TO-220FP
1000
500
150
10
36
9
5
3
4
BUL310FP
1
2
3
Unit
o
o
W
V
V
V
A
A
A
A
C
C
1/6

Related parts for BUL310FP

BUL310FP Summary of contents

Page 1

... FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The BUL310FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA ...

Page 2

... BUL310FP THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Collector Cut-off CEO Current ( Collector-Emitter CEO(sus) Sustaining Voltage ( Emitter-Base Voltage EBO ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain ...

Page 3

... DC Current Gain Collector Emitter Saturation Voltage Inductive Load Fall Time DC Current Gain Base Emitter Saturation Voltage Inductive Load Storage Time BUL310FP 3/6 ...

Page 4

... BUL310FP Reverse Biased SOA Figure 1: Inductive Load Switching Test Circuit (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier 4/6 ...

Page 5

... BUL310FP inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 0.630 1.204 0.417 0.645 0.366 0.126 5/6 ...

Page 6

... BUL310FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

Related keywords