BUL312FP STMicroelectronics, BUL312FP Datasheet

TRANSISTOR, NPN, TO-220FP

BUL312FP

Manufacturer Part Number
BUL312FP
Description
TRANSISTOR, NPN, TO-220FP
Manufacturer
STMicroelectronics
Datasheet

Specifications of BUL312FP

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
500V
Power Dissipation Pd
36W
Dc Collector Current
5A
Transistor Case Style
TO-220FP
No. Of Pins
3
Svhc
No SVHC (15-Dec-2010)
Collector
RoHS Compliant
Dc Current Gain Hfe
8
Rohs Compliant
Yes

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Part Number:
BUL312FP
Manufacturer:
ST
0
APPLICATIONS
DESCRIPTION
The BUL312FP is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
ABSOLUTE MAXIMUM RATINGS
March 2004
Symbol
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125
LARGE RBSOA
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
HORIZONTAL DEFLECTION FOR TV
SMPS
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
V
V
V
V
T
P
I
I
CEO
EBO
CES
I
CM
I
BM
T
isol
stg
C
B
tot
j
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at Tc = 25
Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink
Storage Temperature
Max. Operating Junction Temperature
®
Parameter
p
<5 ms)
C
p
= 0)
<5 ms)
o
B
C
BE
o
= 0)
C
HIGH VOLTAGE FAST-SWITCHING
= 0)
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
Value
TO-220FP
1150
1500
500
150
10
36
9
5
3
4
BUL312FP
1
2
3
Unit
o
o
W
V
V
V
A
A
A
A
V
C
C
1/6

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BUL312FP Summary of contents

Page 1

... HORIZONTAL DEFLECTION FOR TV SMPS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The BUL312FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. ...

Page 2

... BUL312FP THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Collector Cut-off CEO Current ( Collector-Emitter CEO(sus) Sustaining Voltage ( Emitter-Base Voltage EBO ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain ...

Page 3

... DC Current Gain Collector Emitter Saturation Voltage Inductive Fall Time DC Current Gain Base Emitter Saturation Voltage Inductive Storage Time BUL312FP 3/6 ...

Page 4

... BUL312FP Reverse Biased SOA 4/6 Figure 1: Inductive Load Switching Test Circuit (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier ...

Page 5

... BUL312FP inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 0.630 1.204 0.417 0.645 0.366 0.126 5/6 ...

Page 6

... BUL312FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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