TRANSISTOR, PNP, D-PAK

 

KSH127

Manufacturer Part NumberKSH127
DescriptionTRANSISTOR, PNP, D-PAK
ManufacturerFairchild Semiconductor
KSH127 datasheet
 

Specifications of KSH127

Transistor PolarityPNPCollector Emitter Voltage V(br)ceo100V
Power Dissipation Pd20WDc Collector Current-8A
Transistor Case StyleD-PAKNo. Of Pins3
SvhcNo SVHC (15-Dec-2010)Collector EmitterRoHS Compliant
Dc Current Gain Hfe1000Rohs CompliantYes
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
Page 1/6

Download datasheet (58Kb)Embed
Next
D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
• Electrically Similar to Popular TIP127
• Complement to KSH122
PNP Silicon Darlington Transistor
Absolute Maximum Ratings
Symbol
Parameter
V
Collector-Base Voltage
CBO
V
Collector-Emitter Voltage
CEO
V
Emitter-Base Voltage
EBO
I
Collector Current (DC)
C
I
Collector Current (Pulse)
CP
I
Base Current
B
P
Collector Dissipation (T
C
Collector Dissipation (T
T
Junction Temperature
J
T
Storage Temperature
STG
Electrical Characteristics
Symbol
Parameter
V
(sus)
*Collector-Emitter Sustaining Voltage
CEO
I
Collector Cut-off Current
CEO
I
Collector Cut-off Current
CBO
I
Emitter Cut-off Current
EBO
h
*DC Current Gain
FE
V
(sat)
*Collector-Emitter Saturation Voltage
CE
V
(sat)
*Base-Emitter Saturation Voltage
BE
V
(on)
*Base-Emitter On Voltage
BE
C
Output Capacitance
ob
* Pulse Test: PW 300 s, Duty Cycle 2%
©2002 Fairchild Semiconductor Corporation
KSH127
1
T
=25 C unless otherwise noted
C
Value
Units
- 100
- 100
- 5
- 8
- 16
- 120
=25 C)
20
C
=25 C)
1.75
a
150
- 65 ~ 150
T
=25 C unless otherwise noted
C
Test Condition
I
= - 30mA, I
C
V
= - 50V, I
CE
V
= - 100V, I
CB
V
= - 5V, I
EB
V
= - 4V, I
CE
V
= - 4V, V
CE
I
= - 4A, I
C
B
I
= - 8A, I
C
B
I
= - 8A, I
C
B
V
= -4V, I
CE
V
= - 10V, I
CB
f= 0.1MHz
D-PAK
I-PAK
1
1.Base
2.Collector
3.Emitter
Equivalent Circuit
C
V
V
B
V
A
A
mA
R1
R2
W
R 1 8 k
E
W
R 2 0.12 k
C
C
Min.
Max.
Units
= 0
- 100
V
B
= 0
- 10
A
B
= 0
- 10
A
E
= 0
- 2
mA
C
= - 4A
1000
12K
C
= -8A
100
EB
= - 16mA
- 2
V
= - 80mA
- 4
V
= - 80mA
- 4.5
V
= - 4A
- 2.8
V
C
= 0
300
pF
E
Rev. A4, October 2002

KSH127 Summary of contents

  • Page 1

    ... Current Gain FE V (sat) *Collector-Emitter Saturation Voltage CE V (sat) *Base-Emitter Saturation Voltage BE V (on) *Base-Emitter On Voltage BE C Output Capacitance ob * Pulse Test: PW 300 s, Duty Cycle 2% ©2002 Fairchild Semiconductor Corporation KSH127 1 T =25 C unless otherwise noted C Value Units - 100 - 100 - 120 = =25 C) 1.75 a ...

  • Page 2

    ... Figure 1. DC current Gain 1000 100 [V], COLLECTOR BASE VOLTAGE CB Figure 3. Collector Output Capacitance 0.1 -0 [A], COLLECTOR CURRENT C Figure 5. Turn Off Time ©2002 Fairchild Semiconductor Corporation - - -0.1 -0.01 -10 -0.1 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 1 0.1 0.01 -10 -100 -0.1 -100 V ...

  • Page 3

    ... Typical Characteristic 100 C], CASE TEMPERATURE C Figure 7. Power Derating ©2002 Fairchild Semiconductor Corporation (Continued) 125 150 175 Rev. A4, October 2002 ...

  • Page 4

    ... Package Dimensions (0.50) MAX0.96 2.30TYP [2.30 0.20] ©2002 Fairchild Semiconductor Corporation D-PAK 6.60 0.20 5.34 0.30 (4.34) (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 6.60 (2XR0.25) 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 0.20 (5.34) (5.04) (1.50) 0.76 0.10 Dimensions in Millimeters Rev ...

  • Page 5

    ... Package Dimensions (0.50) MAX0.96 0.76 0.10 2.30TYP [2.30 0.20] ©2002 Fairchild Semiconductor Corporation (Continued) I-PAK 6.60 0.20 5.34 0.20 (4.34) (0.50) 2.30TYP [2.30 0.20] 2.30 0.20 0.50 0.10 0.50 0.10 Dimensions in Millimeters Rev. A4, October 2002 ...

  • Page 6

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...