NTE2306 NTE ELECTRONICS, NTE2306 Datasheet
NTE2306
Manufacturer Part Number
NTE2306
Description
TRANSISTOR,BJT,PNP,160V V(BR)CEO,16A I(C),TO-218
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2306.pdf
(2 pages)
Specifications of NTE2306
Rohs Compliant
YES
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Description:
The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type
package designed for use in high power audio amplifier applications and high voltage switching regu-
lator circuits.
Features:
D High Collector–Emitter Sustaining Voltage: V
D High DC Current Gain: h
D Low Collector–Emitter Saturation Voltage: V
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Continuous Base Current, I
Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Note 1. Pulse Test: Pulse Width
Electrical Charactertistics: (T
Note 2. Pulse Test: Pulse Width
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector–Emitter Cutoff Current
Emitter–Base Cutoff Current
Collector–Base Cutoff Current
Continuous
Peak (Note 1)
Parameter
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
Silicon Complementary Transistors
EB
NTE2305 (NPN) & NTE2306 (PNP)
CB
B
High Voltage Power Amplifier
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
V
= 35 Typ @ I
Symbol
C
CEO(sus)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
I
= +25 C unless otherwise specified)
CEO
EBO
CBO
CEX
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5ms, Duty Cycle
300 s, Duty Cycle
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
V
V
V
V
V
C
CE
CE
CE
BE
CB
J
thJC
= 200mA, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 160V, V
C
= 160V, V
= 80V, I
= 7V, I
= 160V, I
= 8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CE(sat)
CEO(sus)
C
Test Conditions
B
= 0
B
E
EB9off)
= 0
EB(off)
= 0, Note 2
= 0
= 2V Max @ I
10%.
2%.
= 160V
= 1.5V, T
= 1.5V
C
= +150 C
C
= 8A
Min
160
–
–
–
–
–
Typ
–65 to +150 C
–65 to +150 C
–
–
–
–
–
–
Max
750
750
0.1
5.0
1.0
–
1 C/W
125W
160V
160V
Unit
mA
mA
mA
70V
16A
20A
V
A
A
5A
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NTE2306 Summary of contents
Page 1
... NTE2305 (NPN) & NTE2306 (PNP) Silicon Complementary Transistors Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regu- lator circuits. Features: D High Collector–Emitter Sustaining Voltage High DC Current Gain Low Collector– ...
Page 2
Electrical Charactertistics (Cont’d): (T Parameter ON Characteristics (Note 2) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Base–Emitter ON Voltage Dynamic Characteristics Current–Gain Bandwidth Product Output Capacitance Note 2. Pulse Test: Pulse Width | S f Note 3. f ...