NTE2314 NTE ELECTRONICS, NTE2314 Datasheet
NTE2314
Manufacturer Part Number
NTE2314
Description
TRANSISTOR,BJT,PNP,50V V(BR)CEO,15A I(C),TO-218VAR
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2314.pdf
(2 pages)
Description:
The NTE2314 is a silicon PNP transistor in a TO3P type package. Typical applications include relay
drivers, high–speed inverters, converters, and other general high–current switching applications.
Features:
D Low Collector–Emitter Saturation Voltage
D Wide ASO and Resistant to Breakdowns
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base voltage, V
Collector Current, I
Allowable Collector Dissipation (T
Operating Junction Temperature, T
Storage Ambient Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain–Bandwidth Product
Collector–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Turn–On Time
Storage Time
Fall Time
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
High Current, High Speed Switch
CBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon PNP Transistor
A
C
(Compl to NTE2304)
V
V
V
J
Symbol
V
= +25 C unless otherwise specified)
= +25 C ), P
(BR)CBO
(BR)CBO
(BR)EBO
I
I
CE(sat)
h
CBO
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
t
t
f
stg
on
FE
t
T
f
stg
NTE2314
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
V
V
I
I
I
I
10I
PW = 20 s
C
C
C
E
CB
EB
CE
CE
CE
= 8A, I
= 1mA, I
= 1mA, R
= 1mA, I
B1
= 40V, I
= 4V, I
= 2V, I
= 2V, I
= 5V, I
C
= –10I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
B
C
C
C
C
C
= 0.4A
E
BE
E
B2
= 0
= 0
= 0
= 1A
= 8A
= 1A
= 0
=
= I
C
= 2A,
Min
100
30
60
50
–
–
–
–
6
–
–
–
0.26
Typ
0.2
0.5
0.1
20
–
–
–
–
–
–
–
–55 to +150 C
Max
200
0.1
0.1
0.5
–
–
–
–
–
–
–
–
+150 C
Unit
MHz
mA
mA
90W
V
V
V
V
60V
50V
15A
20A
s
s
s
6V
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NTE2314 Summary of contents
Page 1
... High Current, High Speed Switch Description: The NTE2314 is a silicon PNP transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications. Features: D Low Collector–Emitter Saturation Voltage D Wide ASO and Resistant to Breakdowns Absolute Maximum Ratings: (T Collector– ...
Page 2
C .591 (15.02) .787 (20. .126 (3.22) Dia E .215 (5.47) ...