PBRP113ET NXP Semiconductors, PBRP113ET Datasheet
PBRP113ET
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PBRP113ET Summary of contents
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... PBRP113ET PNP 800 mA BISS RET Rev. 01 — 17 December 2007 1. Product profile 1.1 General description 800 mA PNP low V Transistor (RET small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN113ET. 1.2 Features I 800 mA repetitive peak output current I High current gain h ...
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... Marking codes Limiting values Parameter collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative output current repetitive peak output current Rev. 01 — 17 December 2007 PBRP113ET Simplified outline Symbol [1] Marking code *7K Conditions Min open emitter - open base ...
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... O , standard footprint 600 P tot (mW) 400 200 (1) Ceramic PCB standard footprint 2 3 (2) FR4 PCB, mounting pad for collector 1 cm (3) FR4 PCB, standard footprint Rev. 01 — 17 December 2007 PBRP113ET Conditions Min amb [3] - [ 006aaa998 (1) (2) ( 125 175 T ...
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... SOT23 (TO-236AB); typical values PBRP113ET_1 Product data sheet PNP 800 mA BISS RET Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to solder point O , standard footprint Rev. 01 — 17 December 2007 PBRP113ET Min Typ Max [ 500 [ 338 [ 219 - - 105 006aab000 ...
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... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23 (TO-236AB); typical values PBRP113ET_1 Product data sheet PNP 800 mA BISS RET Rev. 01 — 17 December 2007 PBRP113ET 006aab001 (s) p 006aab002 (s) p © NXP B.V. 2007. All rights reserved ...
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... 600 mA off-state input voltage 100 A C on-state input voltage bias resistor 1 (input) bias resistor ratio collector capacitance MHz 300 s; 0.02. p Rev. 01 — 17 December 2007 PBRP113ET Min Typ - - - - - - 40 65 [1] 130 190 [1] 140 210 - [1] - 200 [1] - 450 0 1.3 0 © NXP B.V. 2007. All rights reserved. ...
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... T Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values 006aab075 1 V CEsat ( (mA (1) T (2) T (3) T Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values Rev. 01 — 17 December 2007 PBRP113ET 006aab074 (1) (2) ( (mA 100 C amb = 25 C amb = 40 C amb 006aab076 ...
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... (1) T amb (2) T amb (3) T amb Fig 10. Off-state input voltage as a function of collector current; typical values 3.0 2.8 3 2.5 1.4 2.1 1.2 1 1.9 Dimensions in mm Rev. 01 — 17 December 2007 PBRP113ET 006aab078 (1) (2) ( (mA 100 C 1.1 0.9 0.45 0.15 2 0.48 0.15 0.38 ...
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... Rev. 01 — 17 December 2007 PBRP113ET [1] Packing quantity 3000 -215 Section 13. 1 solder lands 2.70 solder resist solder paste occupied area 0.60 Dimensions in mm (3x) sot023 solder lands solder resist ...
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... NXP Semiconductors 11. Revision history Table 9. Revision history Document ID Release date PBRP113ET_1 20071217 PBRP113ET_1 Product data sheet PNP 800 mA BISS RET Data sheet status Change notice Product data sheet - Rev. 01 — 17 December 2007 PBRP113ET Supersedes - © NXP B.V. 2007. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 17 December 2007 PBRP113ET © NXP B.V. 2007. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 17 December 2007 Document identifier: PBRP113ET_1 ...