PBRP113ZT NXP Semiconductors, PBRP113ZT Datasheet
PBRP113ZT
Specifications of PBRP113ZT
Available stocks
Related parts for PBRP113ZT
PBRP113ZT Summary of contents
Page 1
... PBRP113ZT PNP 800 mA BISS RET Rev. 01 — 16 January 2008 1. Product profile 1.1 General description 800 mA PNP low V Transistor (RET small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN113ZT. 1.2 Features I 800 mA repetitive peak output current I High current gain h ...
Page 2
... Marking codes Limiting values Parameter collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative output current repetitive peak output current Rev. 01 — 16 January 2008 PBRP113ZT Simplified outline Symbol [1] Marking code *7M Conditions Min open emitter - open base ...
Page 3
... O , standard footprint 600 P tot (mW) 400 200 (1) Ceramic PCB standard footprint 2 3 (2) FR4 PCB, mounting pad for collector 1 cm (3) FR4 PCB, standard footprint Rev. 01 — 16 January 2008 PBRP113ZT Conditions Min amb [3] - [ 006aaa998 (1) (2) ( 125 175 T ...
Page 4
... SOT23 (TO-236AB); typical values PBRP113ZT_1 Product data sheet PNP 800 mA BISS RET Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to solder point O , standard footprint Rev. 01 — 16 January 2008 PBRP113ZT Min Typ Max [ 500 [ 338 [ 219 - - 105 006aab000 ...
Page 5
... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23 (TO-236AB); typical values PBRP113ZT_1 Product data sheet PNP 800 mA BISS RET Rev. 01 — 16 January 2008 PBRP113ZT 006aab001 (s) p 006aab002 (s) p © NXP B.V. 2008. All rights reserved ...
Page 6
... 600 mA off-state input voltage 100 A C on-state input voltage bias resistor 1 (input) bias resistor ratio collector capacitance MHz 300 s; 0.02. p Rev. 01 — 16 January 2008 PBRP113ZT Min Typ - - - - - - 190 270 [1] 230 320 [1] 190 270 - [1] - 200 [1] - 450 0.3 0.5 0.4 0.7 0 © NXP B.V. 2008. All rights reserved. ...
Page 7
... V CEsat ( (mA) C (1) T (2) T (3) T Fig 6. Collector-emitter saturation voltage as a 006aab081 V CEsat ( (mA) C (1) T (2) T (3) T Fig 8. Collector-emitter saturation voltage as a Rev. 01 — 16 January 2008 PBRP113ZT 1 (1) (2) ( 100 C amb = 25 C amb = 40 C amb function of collector current; typical values 1 (1) ( ...
Page 8
... (1) T amb (2) T amb (3) T amb Fig 10. Off-state input voltage as a function of collector current; typical values 3.0 2.8 3 2.5 1.4 2.1 1.2 1 1.9 Dimensions in mm Rev. 01 — 16 January 2008 PBRP113ZT 006aab084 (1) (2) ( (mA 100 C 1.1 0.9 0.45 0.15 2 0.48 0.15 0.38 ...
Page 9
... Rev. 01 — 16 January 2008 PBRP113ZT [1] Packing quantity 3000 -215 Section 13. 1 solder lands 2.70 solder resist solder paste occupied area 0.60 Dimensions in mm (3x) sot023 solder lands solder resist ...
Page 10
... NXP Semiconductors 11. Revision history Table 9. Revision history Document ID Release date PBRP113ZT_1 20080116 PBRP113ZT_1 Product data sheet PNP 800 mA BISS RET Data sheet status Change notice Product data sheet - Rev. 01 — 16 January 2008 PBRP113ZT Supersedes - © NXP B.V. 2008. All rights reserved ...
Page 11
... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 16 January 2008 PBRP113ZT © NXP B.V. 2008. All rights reserved ...
Page 12
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 16 January 2008 Document identifier: PBRP113ZT_1 ...