PBSS5560PA NXP Semiconductors, PBSS5560PA Datasheet

PBSS5560PA
Manufacturer Part Number	PBSS5560PA
Description	TRANSISTOR,PNP,60V,5A,SOT1061
Manufacturer	NXP Semiconductors
PBSS5560PA datasheets	1. PBSS5560PA115.pdf (15 pages)

Request lead time and price

Availability: By request

International delivery:

Warranty: 60 days

Shipping & payment terms

Specifications of PBSS5560PA
Transistor Polarity	PNP	Collector Emitter Voltage V(br)ceo	-60V
Power Dissipation Pd	2.1W	Dc Collector Current	-5A
Operating Temperature Range	-55Â°C To +150Â°C	Transistor Case Style	SOT-1061
No. Of	RoHS Compliant	Dc Current Gain Hfe	265
Rohs Compliant	Yes

Page 1/15

Download datasheet (167Kb)Embed

Prev Next

PBSS5560PA

60 V, 5 A PNP low V

Rev. 01 — 21 April 2010

1. Product profile

1.1 General description

PNP low V

thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

medium power capability.

NPN complement: PBSS4560PA.

1.2 Features and benefits

Low collector-emitter saturation voltage V

High collector current capability I

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Exposed heat sink for excellent thermal and electrical conductivity

Leadless small SMD plastic package with medium power capability

1.3 Applications

Loadswitch

Battery-driven devices

Power management

Charging circuits

Power switches (e.g. motors, fans)

1.4 Quick reference data

Table 1.

Symbol

CEO

CEsat

[1]

Pulse test: t

(BISS) transistor

CEsat

Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra

CEsat

and I

Quick reference data

Parameter

Conditions

collector-emitter voltage

open base

collector current

peak collector current

single pulse;

≤ 1 ms

= −5 A;

collector-emitter

= −250 mA

saturation resistance

≤ 300 μs; δ ≤ 0.02.

Product data sheet

CEsat

Min

Typ

[1]

Max

Unit

−60

−5

−6

mΩ

Download datasheet (167Kb)

Related parts for PBSS5560PA
Part Number	Description	Manufacturer	Datasheet
PBSS5560PA,115	TRANSISTOR PNP 60V 5A SOT1061	NXP Semiconductors	PBSS5560PA115.pdf (15 pages)
PBSS5540Z,115	TRANS PNP 40V 5A SOT223	NXP Semiconductors	PBSS5540Z115.pdf (9 pages)
PBSS5520X,135	TRANS NPN 20V 5A SOT89	NXP Semiconductors	PBSS5520X135.pdf (13 pages)
pbss5540z	Pnp Medium Power Transistor	NXP Semiconductors	PBSS5540Z.pdf (12 pages)
PBSS5580PA,115	TRANS PNP 80V 4A SOT1061	NXP Semiconductors	PBSS5580PA115.pdf (15 pages)
PBSS5540X,135	TRANS PNP 40V 4A SOT89	NXP Semiconductors	PBSS4540X135.pdf (13 pages)
PBSS5580PA	TRANSISTOR,PNP,80V,4A,SOT1061	NXP Semiconductors	PBSS5580PA115.pdf (15 pages)
PBSS5520X	20V 5A PNP low VCEsat (BISS) transistor	NXP Semiconductors	PBSS5520X.pdf (13 pages)
pbss5540x	40 V, 5 A Pnp Low Vcesat Biss Transistor	NXP Semiconductors	PBSS5540X.pdf (13 pages)
PBSS301PZ	Pbss301pz 12 V, 5.7 A Pnp Low Vcesat Biss Transistor	NXP Semiconductors	PBSS301PZ.pdf (14 pages)
PBSS4160DPN,115	TRANS NPN/PNP 60V LOW SAT SC-74	NXP Semiconductors	PBSS4160DPN115.pdf (18 pages)
PBSS4140DPN,115	TRANS NPN/PNP 40V 1A SOT457	NXP Semiconductors	PBSS4140DPN115.pdf (11 pages)
PBSS3515VS,115	TRANS PNP 15V 1000MA SOT666	NXP Semiconductors	PBSS3515VS115.pdf (9 pages)
PBSS2515E,115	TRANS NPN 15V .5A LOW SAT SC75	NXP Semiconductors	PBSS2515E115.pdf (12 pages)
PBSS5320T,215	TRANS PNP 20V 2A SOT23	NXP Semiconductors	PBSS5320T215.pdf (10 pages)

PBSS5560PA Summary of contents
Page 1 ... PBSS5560PA PNP low V Rev. 01 — 21 April 2010 1. Product profile 1.1 General description PNP low V thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4560PA. 1.2 Features and benefits Low collector-emitter saturation voltage V High collector current capability I ... Page 2 ... T amb All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V CEsat Simplified outline Graphic symbol Transparent top view Marking code AC Min ... Page 3 ... Power derating curves Thermal characteristics Parameter thermal resistance from junction to ambient O , standard footprint All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V CEsat Min - −55 −65 006aab978 25 75 125 175 T (°C) amb ... Page 4 ... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5560PA_1 Product data sheet −3 −2 − −3 −2 − All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V (BISS) transistor CEsat 006aab979 (s) p 006aab980 ... Page 5 ... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5560PA_1 Product data sheet −3 −2 − −3 −2 − All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V (BISS) transistor CEsat 006aab981 (s) p 006aab982 ... Page 6 ... −100 mA 100 MHz collector capacitance ≤ 300 μs; δ ≤ 0.02. p All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V CEsat Min = − − − − −2 V [1] = − ... Page 7 ... I (mA) C Fig 7. 006aac082 −10 −10 − (mA) C Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V CEsat −6.0 (mA) = − −32 (A) −24 −4.0 −16 −2.0 −8 0.0 −1.0 −2.0 −3.0 0 °C T amb Collector current as a function of collector-emitter voltage ... Page 8 ... Fig 11. Collector-emitter saturation voltage as a 006aac086 (1) (2) (3) −10 2 −10 3 − (mA) C Fig 13. Collector-emitter saturation resistance as a All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V CEsat −10 V CEsat (V) −1 −1 −10 (1) (2) −2 −10 (3) −3 −10 − ... Page 9 ... Fig 15. Test circuit for switching times PBSS5560PA_1 Product data sheet (probe) oscilloscope 450 Ω − − −0 Bon All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V CEsat − I (100 %) Bon − I Boff off (probe) o oscilloscope 450 Ω DUT mgd624 = 0 ... Page 10 ... Dimensions in mm Packing methods Description SOT1061 4 mm pitch tape and reel All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V (BISS) transistor CEsat 0.65 max 0.45 2 0.35 2.1 1.1 1.9 ... Page 11 ... Reflow soldering is the only recommended soldering method. All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V (BISS) transistor CEsat 2.1 1.3 0.5 (2×) 0.4 (2×) 0.5 (2×) 0.6 (2× ... Page 12 ... Release date PBSS5560PA_1 20100421 PBSS5560PA_1 Product data sheet PNP low V Data sheet status Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA (BISS) transistor CEsat Change notice Supersedes - - © NXP B.V. 2010. All rights reserved ... Page 13 ... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V (BISS) transistor CEsat © NXP B.V. 2010. All rights reserved. ... Page 14 ... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V (BISS) transistor CEsat © NXP B.V. 2010. All rights reserved ... Page 15 ... NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com (BISS) transistor CEsat All rights reserved. Date of release: 21 April 2010 Document identifier: PBSS5560PA_1 ...

PBSS5560PA Summary of contents

Page 1
... PBSS5560PA PNP low V Rev. 01 — 21 April 2010 1. Product profile 1.1 General description PNP low V thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4560PA. 1.2 Features and benefits Low collector-emitter saturation voltage V High collector current capability I ...
Page 2
... T amb All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V CEsat Simplified outline Graphic symbol Transparent top view Marking code AC Min ...
Page 3
... Power derating curves Thermal characteristics Parameter thermal resistance from junction to ambient O , standard footprint All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V CEsat Min - −55 −65 006aab978 25 75 125 175 T (°C) amb ...
Page 4
... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5560PA_1 Product data sheet −3 −2 − −3 −2 − All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V (BISS) transistor CEsat 006aab979 (s) p 006aab980 ...
Page 5
... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5560PA_1 Product data sheet −3 −2 − −3 −2 − All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V (BISS) transistor CEsat 006aab981 (s) p 006aab982 ...
Page 6
... −100 mA 100 MHz collector capacitance ≤ 300 μs; δ ≤ 0.02. p All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V CEsat Min = − − − − −2 V [1] = − ...
Page 7
... I (mA) C Fig 7. 006aac082 −10 −10 − (mA) C Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V CEsat −6.0 (mA) = − −32 (A) −24 −4.0 −16 −2.0 −8 0.0 −1.0 −2.0 −3.0 0 °C T amb Collector current as a function of collector-emitter voltage ...
Page 8
... Fig 11. Collector-emitter saturation voltage as a 006aac086 (1) (2) (3) −10 2 −10 3 − (mA) C Fig 13. Collector-emitter saturation resistance as a All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V CEsat −10 V CEsat (V) −1 −1 −10 (1) (2) −2 −10 (3) −3 −10 − ...
Page 9
... Fig 15. Test circuit for switching times PBSS5560PA_1 Product data sheet (probe) oscilloscope 450 Ω − − −0 Bon All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V CEsat − I (100 %) Bon − I Boff off (probe) o oscilloscope 450 Ω DUT mgd624 = 0 ...
Page 10
... Dimensions in mm Packing methods Description SOT1061 4 mm pitch tape and reel All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V (BISS) transistor CEsat 0.65 max 0.45 2 0.35 2.1 1.1 1.9 ...
Page 11
... Reflow soldering is the only recommended soldering method. All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V (BISS) transistor CEsat 2.1 1.3 0.5 (2×) 0.4 (2×) 0.5 (2×) 0.6 (2× ...
Page 12
... Release date PBSS5560PA_1 20100421 PBSS5560PA_1 Product data sheet PNP low V Data sheet status Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA (BISS) transistor CEsat Change notice Supersedes - - © NXP B.V. 2010. All rights reserved ...
Page 13
... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V (BISS) transistor CEsat © NXP B.V. 2010. All rights reserved. ...
Page 14
... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 PBSS5560PA PNP low V (BISS) transistor CEsat © NXP B.V. 2010. All rights reserved ...
Page 15
... NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com (BISS) transistor CEsat All rights reserved. Date of release: 21 April 2010 Document identifier: PBSS5560PA_1 ...

PBSS5560PA

PBSS5560PA

Shipping terms

Payment terms

Specifications of PBSS5560PA

Related parts for PBSS5560PA

PBSS5560PA Summary of contents

Related keywords: