BD139 MULTICOMP, BD139 Datasheet - Page 3
BD139
Manufacturer Part Number
BD139
Description
BIPOLAR TRANSISTOR, NPN, 80V
Manufacturer
MULTICOMP
Datasheet
1.BD139.pdf
(4 pages)
Specifications of BD139
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation Pd
1.25W
Dc Collector Current
1.5A
Dc Current Gain Hfe
250
No. Of Pins
3
No. Of Transistors
1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BD139
Manufacturer:
FUJI
Quantity:
10 000
Company:
Part Number:
BD139
Manufacturer:
STM
Quantity:
100 000
Part Number:
BD139
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BD139-10
Manufacturer:
CDIL
Quantity:
20 000
Part Number:
BD139-10
Manufacturer:
ST
Quantity:
20 000
Part Number:
BD139-16
Manufacturer:
ON/安森美
Quantity:
20 000
** h
* Pulse Test: Pulse Width = ≤300µs, Duty Cycle ≤2%.
Specifications
Characteristics (T
BD139
TO-126 NPN Transistors
Collector Cut off Current
I
I
Emitter Cut off Current
I
Breakdown Voltages
I
I
I
Saturation Voltage
I
Base-Emitter On Voltage
I
DC Current Gain
I
I
I
Maximum
E
E
C
C
C
E
C
C
C
C
C
FE
= 0; V
= 0; V
= 0.03A; I
= 1mA; I
= 0; V
= 1mA; I
= 0.5A; I
= 0.5A; V
= 0.15A; V
= 0.15A; V
= 0.15A; V
I
C (av)
(A)
1.5
Classification:
CB
CB
EB
E
C
B
= 30V; T
= 30V
= 5V
CE
B
= 0.05A
CE
CE
CE
= 0
= 0
= 0
= 2V
= 2V*
= 2V**
= 2V*
Maximum
C
V
(V)
= 125°C
80
CEO
amb
-
= 25°C unless otherwise specified)
-6
-10
-16
-25
at I
Minimum
C
= 0.15mA
Minimum
Maximum
Minimum
Maximum
Minimum
Maximum
Minimum
Maximum
h
40
FE
at 25°C
(mW)
12.5
P
40
100
63
160
100
250
160
400
V
tot
V
V
CEO (Sus)
CE (sat)
Symbol
V
BE (on)
Page 3
V
I
h
I
CBO
EBO
CBO
EBO
FE
*
*
*
*
Package
TO-126
Plastic
Maximum
Maximum
Maximum
Minimum
Minimum
Minimum
Minimum
-
Type
NPN
BD139
100
250
0.1
5.0
0.5
1.0
10
10
40
25
40
25
Part Number
BD139
09/05/08 V1.1
µA
Unit
V
-