BC818-25/E9 Vishay, BC818-25/E9 Datasheet

BIPOLAR TRANSISTOR, NPN, 25V

BC818-25/E9

Manufacturer Part Number
BC818-25/E9
Description
BIPOLAR TRANSISTOR, NPN, 25V
Manufacturer
Vishay
Datasheet

Specifications of BC818-25/E9

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
25V
Transition Frequency Typ Ft
100MHz
Power Dissipation Pd
310mW
Dc Collector Current
800mA
Dc Current Gain Hfe
160
No. Of Pins
3
Document Number 88163
09-May-02
Maximum Ratings and Thermal Characteristics
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at T
Thermal Resistance Junction to Ambiant Air
Thermal Resistance Junction to Substrate Backside
Junction Temperature
Storage Temperature Range
Note: (1) Device on fiberglass substrate, see layout on third page.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
.016 (0.4)
.037(0.95) .037(0.95)
1
.016 (0.4)
.122 (3.1)
.110 (2.8)
3
Dimensions in inches and (millimeters)
.016 (0.4)
2
TO-236AB (SOT-23)
SB
(base shorted)
(base open)
= 50 ˚C
Top View
Small Signal Transistors (NPN)
.102 (2.6)
.094 (2.4)
Pin Configuration
1 = Base
2 = Emitter
3 = Collector
BC817
BC818
BC817
BC818
Symbol
V
V
V
R
–I
R
P
I
I
CEO
CES
EBO
CM
BM
I
T
Features
• NPN Silicon Epitaxial Planar Transistors for
• Especially suited for automatic insertion in thick
• These transistors are subdivided into three groups
-16, -25, and -40 according to their current gain.
• As complementary types, the PNP transistors
T
C
EM
tot
SB
JA
S
BC807 and BC808 are recommended.
j
switching, AF driver and amplifier applications.
and thin-film circuits.
0.037 (0.95)
(T
A
= 25°C unless otherwise noted)
0.079 (2.0)
Mounting Pad Layout
BC817-16
BC818-16
Type
–65 to +150
Vishay Semiconductors
Value
formerly General Semiconductor
-25
-40
-25
-40
310
450
320
1000
1000
800
200
150
50
30
45
25
5
0.031 (0.8)
(1)
(1)
(1)
BC817, BC818
0.035 (0.9)
Marking
6C
6G
6A
6B
6E
6F
0.037 (0.95)
www.vishay.com
°C/W
°C/W
Unit
mW
mA
mA
mA
mA
V
V
V
°C
°C
1

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BC818-25/E9 Summary of contents

Page 1

... CES BC818 BC817 V CEO BC818 V EBO – tot BC817, BC818 Vishay Semiconductors formerly General Semiconductor Mounting Pad Layout 0.031 (0.8) 0.035 (0.9) 0.079 (2.0) 0.037 (0.95) 0.037 (0.95) Type Marking BC817-16 6A -25 6B -40 6C BC818-16 6E - 25°C unless otherwise noted) A Value ...

Page 2

... BC817, BC818 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics Parameter DC Current Gain Current Gain Group-16 Collector Saturation Voltage Base Saturation Voltage Base-Emitter VoltageV BEon Collector-Base Cutoff Current Emitter-Base Cutoff Current Gain-Bandwidth Product Collector-Base Capacitance Note: (1) Device on fiberglass substrate, see layout below. ...

Page 3

... Ratings and Characteristic Curves (T = 25°C unless otherwise noted) A Document Number 88163 09-May-02 BC817, BC818 Vishay Semiconductors formerly General Semiconductor www.vishay.com 3 ...

Page 4

... BC817, BC818 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (T = 25°C unless otherwise noted) A www.vishay.com 4 Document Number 88163 09-May-02 ...

Page 5

... Ratings and Characteristic Curves (T = 25°C unless otherwise noted) A Document Number 88163 09-May-02 BC817, BC818 Vishay Semiconductors formerly General Semiconductor www.vishay.com 5 ...

Page 6

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. ...

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