CTB16-600BW C3 SEMI, CTB16-600BW Datasheet
CTB16-600BW
Manufacturer Part Number
CTB16-600BW
Description
TRIAC, 600V, 16A, TO-220AB
Manufacturer
C3 SEMI
Datasheet
1.CTA16-600CW.pdf
(2 pages)
Specifications of CTB16-600BW
Peak Repetitive Off-state Voltage, Vdrm
600V
Gate Trigger Current Max (qi), Igt
50mA
On State Rms Current It(rms)
16A
Peak Non Rep Surge Current Itsm 50hz
160A
Holding Current Max Ih
50mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Applications
• Phase Control
• Static Switching
• Light Dimming
• Motor Speed Control
• Kitchen Equipment
• Power Tools
• Solenoid Valve Controls:
ISO9001 Certified
TO-220AB Non-Isolated
TO-220AB Isolated
• Dishwasher
• Washing Machines
A1
A1
(CTA16)
A2
(CTB16)
A2
G
G
G
A2
A1
C3 Semiconductor, LLC
A2
Absolute Maximum Ratings
RMS On-State Current (full sine wave)
N
(Full Cycle, Tj Initial = 25 ˚
I
Critical rate of rise of on-state current
I
P
Average Gate Power Dissipation @ Tj = 125 ˚
S
O
s I
Electrical Characteristics
A
I
V
V
I
I
I
dv/dt MIN @ V D = 67%V
(dv/dt)c MIN @ (dv/dt)c = 0.1 V/ms
(dv/dt)c MIN @ (dv/dt)c = 10 V/ms
(di/dt)c MIN without Snubber
STANDARD (4
I
I
V
V
I
I
I
dv/dt MIN @ V D = 67%V
(dv/dt)c MIN @ (di/dt)c = 7.0 A/ms
GENERAL NOTES
2
G
GT
H
L
L
GT
GT
H
L
L
1. Minimum IGT is guaranted at 5% of IGT max.
3. All parameters at 25 degrees C unless otherwise specified.
2. For both polarities of A2 referenced to A1
e
o t
p
GT
GD
GT
GD
n o
L
t
=2 x I
l o
MAX @ I
MAX @ I
k a
MAX @ I
MAX @ I
MAX @ I
MAX @ I
r e
E T
a V
a r
MAX @ V
MAX @ V
MAX @ V
i t a
MAX @ V
MAX @ V
MIN @ V
MIN @ V
R
i t a
G
e g
R
u l
e
n o
N
GT
a
e p
g n
f e
e t
e T
S I
, tr<100ns, Tj = 125 ˚ C
o V
i t i t
r o
J
m
C
T
T
T
G
G
G
G
n u
a t l
e v
r u
O
e p
u f
D
= 500 mA
D
D
= 500 mA
= 1.2 I
= 1.2 I
= 1.2 I
= 1.2 I
D
D
D
D
R
i t c
e g
e r
i s
=12 V, R
=12 V, R
=12 V, R
=V
=V
a r
S
=12 V, R
=12 V, R
N /
Q
g n
t n
r u
n o
u t
a u
C (
>
>
>
>
>
DRM
DRM
O
e g
@
GT
GT
GT
GT
e r
A T
r d
e T
S
Suitable for General Purpose AC Switching
Alternistor/No Snubber Versions
for Inductive Loads
Logic Level Available for use with
Microcontrollers and Low Level Devices
IGT Range 10-50 mA (Q1)
V
, R
, R
T
n a
P
R
N
m
L
L
L
S
NOTE 2
NOTE 2
DRM
= j
L
L
e
n a
= 30Ω
= 30Ω
= 30Ω
U
L
L
e p
e
= 30Ω
DRM
) s t
= 30Ω
DRM
k a
) C
= 3.3kΩ
= 3.3kΩ
i r
B
e g
1
a r
s e
5 2
B
O
/V
(gate open)
(gate open)
u t
E
n
C ˚
n o
NOTE 2
R
NOTE 1
NOTE 1
NOTE 1
S -
e r
RMM
) y l
A
a t
R
N
e t
n a
NOTE 2
NOTE 2
NOTE 2
D
e g
C
400, 600, 800, 1000V
L
r u
O
NOTE 2
NOTE 2
e r
G
C I
t n
C
E L
V
Tj = 125 ˚
T
T
T
T
Tj = 125 ˚
T
T
= j
= j
= j
= j
= j
= j
L E
1
1
1
1
1
1
3 (
5 2
5 2
5 2
5 2
5 2
5 2
Q
C ˚
C ˚
C ˚
C ˚
C ˚
C ˚
C
C
a u
Tc = 100˚C
Tc = 85˚C
r d
Q
Q
Q
Q
Q
n a
Q
Q
Q
I - I
- I
- I
- I
- I
Q
Q
Q
- I
A -
A -
- I I
- I I
- I I
- I I
) s t
I I -
V I
- I I
I I -
I I I
l l
l l
I I I
I I I
I I I
I I I
V I
CONDITIONS
TO-220AB Iso
TO-220AB
p t
p t
F
F
=
=
=
=
16Amp - 400/600/800/1000V -
0 5
0 6
0 1
0 2
z H
z H
m
8
3
2
s µ
0 4
0 1
15mA
5 2
0 3
5 .
0 .
5 2
0 5
25mA
0 4
0 8
0 0
5
s
. 1
. 0
S
/ V
/ V
A
A
C
W
m
V 3
V 2
m
m
m
m
m
m
/ V
m /
m /
s µ
s µ
A
A
A
A
A
A
A
s µ
s
s
CTA/CTB16
. 1
. 0
SYMBOL
V 3
V 2
I
P
T(RMS)
di/dt
I
s T
V
I
TSM
I
G(AV)
GM
j T
5
8
4
2
ISO
1
1
0 1
g t
5 3
35mA
0 5
0 6
0 0
5 .
0 5
50mA
0 5
0 0
t
. 1
. 0
0 0
0 0
C
A
/ V
B
W
m
V 3
V 2
m
m
/ V
m
m
/ V
m
m
m /
s µ
A
A
A
A
A
s µ
s µ
A
A
s
-
-
0 4
0 4
2500 V
RATING
0 1
4 1
144A
100A/µs
o t
o t
0 5
50mA
0 7
0 8
1
168A
. 1
. 0
0 0
16A
B
1W
A
0 6
4A
m
m
m
1 +
1 +
W
V 3
V 2
/ V
m /
A
TRIAC
2
A
A
A
RMS
0 5
5 2
s µ
s
s
˚ C
˚ C
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CTB16-600BW Summary of contents
Page 1
... NOTE ˚ 30Ω NOTE 30Ω NOTE 30Ω 3.3kΩ 125 ˚ DRM L NOTE (gate open) NOTE ˚ DRM NOTE ˚ CTA/CTB16 16Amp - 400/600/800/1000V - TRIAC CONDITIONS SYMBOL RATING TO-220AB I 16A T(RMS) TO-220AB Iso TSM 168A 144A s di/dt 100A/µ µ G(AV ˚ ...
Page 2
... CTA/CTB16-xxxBW 400, 600, 800, 1000 25mΩ CTA/CTB16-xxxC 400, 600, 800, 1000 5µA CTA/CTB16-xxxCW 400, 600, 800, 1000 2mA CTA/CTB16-xxxSW 400, 600, 800, 1000 SYMBOL RATING Part Number Designation R th(j-c) 1.2 ˚ C/W R th(j-c) 2.1 ˚ C/W R th(j-a) 60 ˚ C/W R th(j-a) 60 ˚ ...