IXTK60N50L2 IXYS SEMICONDUCTOR, IXTK60N50L2 Datasheet
IXTK60N50L2
Specifications of IXTK60N50L2
Related parts for IXTK60N50L2
IXTK60N50L2 Summary of contents
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... D = ±30V GSS DSS DS DSS 10V 0.5 • I DS(on © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTK60N50L2 IXTX60N50L2 Maximum Ratings 500 = 1MΩ 500 GS ±30 ±40 60 150 960 -55...+150 150 -55...+150 300 260 1.13/10 20..120 / 4.5.. Characteristic Values Min. Typ. ...
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... Characteristic Values Min. Typ. = 75° 440 C Characteristic Values Min. Typ. JM 980 73 35.8 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTK60N50L2 IXTX60N50L2 TO-264 (IXTK) Outline Max 0.13 °C/W °C/W Max. W PLUS 247 (IXTX) Outline TM Max ...
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... V = 20V GS 14V 12V 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature 5 0 -50 - Degrees Centigrade C IXTK60N50L2 IXTX60N50L2 30A Value D = 60A I = 30A D 75 100 125 150 75 100 125 150 IXYS REF: T_60N50L2(9R)12-08-08-B ...
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... C rss 0.001 Fig. 8. Transconductance 40º 25ºC 35 125º Amperes D Fig. 10. Gate Charge 250V 30A 10mA 100 200 300 400 500 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXTK60N50L2 IXTX60N50L2 100 110 600 700 800 900 0 ...
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... Fig. 14. Forward-Bias Safe Operating Area 1,000.0 R Limit DS(on) 100.0 25µs 100µs 1ms 10.0 10ms 100ms DC 1 150º 75ºC C Single Pulse 0.1 1000 10 IXTK60N50L2 IXTX60N50L2 @ T = 75ºC C 25µs 100µs 1ms 10ms 100ms DC 100 1000 V - Volts DS IXYS REF: T_60N50L2(9R)12-08-08-B ...