2MBI200U2A-060-50 FUJI ELECTRIC, 2MBI200U2A-060-50 Datasheet
2MBI200U2A-060-50
Specifications of 2MBI200U2A-060-50
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2MBI200U2A-060-50 Summary of contents
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... SPECIFICATION Device Name : Type Name : Spec. No. : S.Ogawa Oct. 30 ’03 Y.Seki S.Miyashita Oct. 30 ’03 K.Yamada IGBT module 2MBI200U2A-060 MS5F5616 MS5F 5616 H04-004-07b ...
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Classi- Date Ind. fication Enactment Oct.-30 -’ value(P4/13), VF carve(P11/ a Jan.-16 -’04 Revision 13) ...
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... Type Name : 2MBI200U2A-060 1. Outline Drawing ( Unit : mm ) C2E1 2. Equivalent circuit PKG.No. M232 3-M5 DEPTH 9.5min LABEL MS5F 5616 Tab type terminals (AMP No.110 equivalent H04-004-03a ...
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Maximum Ratings ( at Tc= 25 Items Collector-Emitter voltage Gate-Emitter voltage Collector current Collector Power Dissipation Junction temperature Storage temperature Isolation between terminal and copper base * voltage Screw Torque (* ) All terminals should be connected together when ...
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... Lot.No. 7.Applicable category This specification is applied to IGBT Module named 2MBI200U2A-060 . 8.Storage and transportation notes The module should be stored at a standard temperature Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. ...
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Reliability test results Test cate- Test items gories 1 Terminal Strength Pull force (Pull test) Test time 2 Mounting Strength Screw torque Test time 3 Vibration Range of frequency : 10 ~ 500Hz Sweeping time Acceleration Sweeping direction : ...
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Test cate- Test items gories 1 High temperature Reverse Bias Test temp. Bias Voltage Bias Method Test duration 2 High temperature Bias (for gate) Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity ...
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Reliability Test Results Test cate- Test items gorie s 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker 5 Temperature Cycle ...
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Collector current vs. Collector-Emitter voltage (typ.) Tj chip 500 VGE=20V 15V 12V 400 300 200 100 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 500 400 Tj=25 ...
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Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=16 , Tj= 25 10000 toff 1000 ton 100 10 0 100 200 300 Collector current : Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=200A, VGE=±15V, Tj= 25 ...
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Forward current vs. Forward on voltage (typ.) chip 500 400 Tj=25 300 200 100 Forward on voltage : Transient thermal resistance (max.) 1.000 0.100 0.010 0.001 0.001 0.010 0.100 Pulse width ...
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This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. Connect adequate fuse or protector of circuit between three-phase line and this product to ...
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... Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. - The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights ...