2PB709BRL NXP Semiconductors, 2PB709BRL Datasheet - Page 2

• Manufacturer Part Number: 2PB709BRL
• Description: TRANSISTOR,PNP,50V,0.2A,SOT23
• Manufacturer: NXP Semiconductors

Specifications of 2PB709BRL

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -50V
• Power Dissipation Pd: 250mW
• Dc Collector Current: -200mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-23
• No.: RoHS Compliant
• Dc Current Gain Hfe: 210
• Rohs Compliant: Yes

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
2PB709BRL_2PB709BSL
Product data sheet
Table 3.
Table 4.
Table 5.
[1]
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
Type number
2PB709BRL
2PB709BSL
Type number
2PB709BRL
2PB709BSL
Symbol
V
V
V
I
I
I
C
CM
BM
CBO
CEO
EBO
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
Pinning
Ordering information
Marking codes
Limiting values
base
emitter
collector
Description
All information provided in this document is subject to legal disclaimers.
Package
Name
-
Rev. 1 — 28 June 2010
Description
plastic surface-mounted package; 3 leads
2PB709BRL; 2PB709BSL
50 V, 200 mA PNP general-purpose transistors
open emitter
open base
open collector
Conditions
single pulse;
t
single pulse;
t
p
p
≤ 1 ms
≤ 1 ms
Marking code
MN*
MP*
Simplified outline
1
[1]
3
Min
-
-
-
-
-
-
2
Graphic symbol
© NXP B.V. 2010. All rights reserved.
Max
−60
−50
−6
−200
−250
−200
1
sym013
Version
SOT23
Unit
V
V
V
mA
mA
mA
3
2
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