2PB709BRL NXP Semiconductors, 2PB709BRL Datasheet - Page 5

no-image

2PB709BRL

Manufacturer Part Number
2PB709BRL
Description
TRANSISTOR,PNP,50V,0.2A,SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 2PB709BRL

Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-50V
Power Dissipation Pd
250mW
Dc Collector Current
-200mA
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-23
No.
RoHS Compliant
Dc Current Gain Hfe
210
Rohs Compliant
Yes
NXP Semiconductors
2PB709BRL_2PB709BSL
Product data sheet
Fig 3.
Fig 5.
h
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
500
400
300
200
100
−10
0
V
collector current; typical values
I
2PB709BRL: DC current gain as a function of
2PB709BRL: Collector-emitter saturation voltage as a function of collector current; typical values
C
−1
amb
amb
amb
amb
amb
amb
CE
/I
B
= −10 V
= 10
= 150 °C
= 25 °C
= −55 °C
= 150 °C
= 25 °C
= −55 °C
−1
(1)
(2)
(3)
−10
V
CEsat
−10
−10
(V)
−1
−10
−1
−2
−10
2
All information provided in this document is subject to legal disclaimers.
−1
I
006aac457
C
(mA)
−10
−1
Rev. 1 — 28 June 2010
3
(1)
(3)
−10
Fig 4.
2PB709BRL; 2PB709BSL
−0.08
−0.06
−0.04
−0.02
(A)
(2)
−0.1
I
50 V, 200 mA PNP general-purpose transistors
C
0.0
−10
0.0
T
2PB709BRL: Collector current as a function of
collector-emitter voltage; typical values
2
amb
I
C
006aac459
(mA)
= 25 °C
−2.0
−10
3
I
B
−4.0
(mA) = −0.75
−0.65
−0.55
−0.45
−0.35
−0.25
−0.15
−0.05
−6.0
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
−8.0
© NXP B.V. 2010. All rights reserved.
006aac458
V
CE
(V)
−10.0
5 of 13

Related parts for 2PB709BRL